含POSS光刻胶材料研究进展  

Research Progress of POSS-containing Photoresist Materials

作　　者：尤凤娟 韩俊[1] 严臣凤 王力元[1] YOU Fengjuan;HAN Jun;YAN Chenfeng;WANG Liyuan(College of Chemistry,Beijing Normal University,Beijing 100875,P.R.China)

机构地区：[1]北京师范大学化学学院

出　　处：《影像科学与光化学》2019年第5期465-472,共8页Imaging Science and Photochemistry

摘　　要：光致抗蚀剂又称光刻胶,是微电子加工过程中的关键材料。多面体低聚倍半硅氧烷(POSS)是一种具有规则的笼型结构的聚合物增强材料,由POSS改性的聚合物实现了有机-无机纳米杂化,POSS刚性结构的引入阻碍了聚合物分子的运动,可以显著提高聚合物的玻璃化转变温度(T g),降低聚合物的介电常数,提高聚合物的力学性能,也提高了含POSS光致抗蚀剂的耐蚀刻性。基于这些优点,含POSS的光刻胶材料得到广泛关注。本文对含POSS光刻胶的研究进展作了简要介绍。Photoresists are the key materials for micro-pattern processing.Polyhedral oligomeric silsesquioxane(POSS)is a kind of reinforcement material for polymer with regular cage structure.The polymer modified by POSS realizes organic-inorganic nano-hybridization.The introduction of rigid structure of POSS hinders the movement of polymer molecules,and so significantly increases the glass transition temperature(T g),reduces the dielectric constant and improves the mechanical properties of the polymers.The etch resistance of POSS-containing photoresists is also enhanced.Based on these advantages,POSS-containing photoresist materials have attracted extensive attention.The research progress on POSS-containing photoresists is briefly introduced.

关 键 词：光致抗蚀剂 含POSS 光刻 耐蚀刻性 

分 类 号：TQ3[化学工程]