热氧化GaN制备的β-Ga2O3基日盲紫外探测器  

Aβ-Ga2O3 Solar-Blind Ultraviolet Photodetector Prepared by Thermal Oxidization of GaN

作　　者：孟瑞林 姬小利[2] 张勇辉 张紫辉 毕文刚 王军喜[2] 魏同波[2] MENG Ruilin;JI Xiaoli;ZHANG Yonghui;ZHANG Zihui;BI Wengang;WANG Junxi;WEI Tongbo(School of Electronics and Information Engin..Hebei University of Technol.,Tianjin 300401,CHN;Semiconductor Lighting R&D Center,Institute of Semiconductors of Chinese Academy of Sciences,Beijing 100083,CHN)

机构地区：[1]河北工业大学电子信息工程学院,天津300401 [2]中国科学院半导体研究所半导体照明研发中心,北京100083

出　　处：《半导体光电》2019年第5期637-642,共6页Semiconductor Optoelectronics

基　　金：国家重点研发计划项目(2016YFB0400200);国家自然科学基金项目(61474109,61527814,61404134);北京市自然科学基金项目(4182063)

摘　　要：利用热氧化法将电化学腐蚀制备的多孔GaN薄膜氧化成三维孔隙状β-Ga2O3薄膜,分析了多孔GaN薄膜与传统GaN薄膜在氧化机理上的区别,并通过材料表征证明了多孔GaN薄膜能够实现更快的氧化速率。随后将氧化生成的β-Ga2O3薄膜制备成MSM型β-Ga2O3基日盲紫外探测器,在260nm光照及10V偏压下,器件的响应度为16.9A/W,外量子效率为8×10^3%,探测率D^*达到了2.03×10^14 Jones,能够满足弱光信号的探测需求。此外,器件的瞬态响应具有非常好的稳定性,相应的上升时间为0.75s/4.56s,下降时间为0.37s/3.48s。Nanoporous GaN film prepared by electrochemical etching was oxidized into three-dimensional porousβ-Ga2O3 film by thermal oxidation method.The differences between the oxidation mechanism of nanoporous GaN film and that of traditional GaN film were analyzed.The material characterization confirmed that the nanoporous GaN film can achieve a faster oxidation rate.Subsequently,MSMβ-Ga2O3 based solar-blind ultraviolet photodetectors were fabricated from the oxidizedβ-Ga2O3 film.Under 260 nm illumination and 10 V bias,the responsivity,external quantum efficiency and detectivity D^*of the device were 16.9 A/W,8×10^3% and 2.03×10^14Jones,respectively,which could meet the detection requirements of weak light signals.In addition,the transient response of the device was very stable,the rise times and the fall times were 0.75 s/4.56 sand 0.37 s/3.48 s,respectively.

关 键 词：热氧化 电化学腐蚀 β-Ga2O3 深紫外探测器 GAN 

分 类 号：TN36[电子电信—物理电子学]