功率混合集成电路的热阻分析两例  

Two Cases of Thermal Resistance Analysis for Power Hybrid Integrated Circuit

作　　者：汪张超[1] 周群[1] 吕红杰 何超 周斌[2] WANG Zhang-chao;ZHOU Qun;LV Hong-jie;HE Chao;ZHOU Bin(No.43 Research Institute of CETC,Hefei 230088,China;Science and Technology on Reliability Physics and Application of Electronic Component Laboratory,Guangzhou 510610,China)

机构地区：[1]中国电子科技集团公司第四十三研究所,合肥230088 [2]工业和信息化部电子第五研究所电子元器件可靠性物理及其应用技术重点实验室,广州510610

出　　处：《混合微电子技术》2018年第3期57-62,共6页Hybrid Microelectronics Technology

摘　　要：本文介绍了热阻及器件热结构分析的基本原理。进而阐述了混合集成电路的热分析的两个案例。首先对空洞样品进行热分析。分析了混合集成封装时,芯片粘接层空洞对热阻造成的影响,并分析原因;最后对功率循环样品热特性的退化进行分析。This article describes the basic principles of thennal resistance and device themial structure analysis.Furthermore,two cases of thermal analysis of hybrid integrated circuits are described.The thermal analysis of the cavity samples is firstly performed.The influence of the die bonding layer void on the thennal resistance during the hybrid integrated package is analyzed,and the cause is analyzed.Finally,the degradation of the thermal characteristics of the power cycle sample is analyzed.

关 键 词：混合集成电路 热阻 VDMOS 空洞 

分 类 号：TN401[电子电信—微电子学与固体电子学]