基于正交设计的Si基复合衬底优化工艺试验  

Optimization process test of Si-based composite substrate based on orthogonal design

作　　者：王丛[1] 强宇[1] 高达[1] 师景霞 WANG Cong;QIANG Yu;GAO Da;SHI Jing-xia(North China Research Institute of Electro-Optics,Beijing 100015,China)

机构地区：[1]华北光电技术研究所

出　　处：《激光与红外》2019年第11期1353-1356,共4页Laser & Infrared

摘　　要：在正交设计的基础上,通过一系列工艺测试实验,研究了MEE外延温度、MEE退火温度、CdTe外延温度、CdTe退火温度对Si基复合衬底的两个关键质量因素FWHM和表面粗糙度的影响。通过统计技术对测得的实验数据进行了方差分析,结果表明,CdTe退火温度是影响FWHM的关键因子,MEE退火温度和CdTe外延温度对R_a值来说影响是显著的。通过该系列实验得到最优的外延工艺条件。Based on the orthogonal design,two key quality factors FWHM and surface roughness of the Si-based composite substrate were studied by a series of process tests and experiments:MEE epitaxial temperature,MEE annealing temperature,CdTe epitaxy temperature and CdTe annealing temperature impact.The variance analysis of the measured experimental data was carried out by statistical techniques.The results show that the annealing temperature of CdTe is the key factor affecting FWHM.The effect of MEE annealing temperature and CdTe extension temperature on R_a value is significant.The optimal epitaxial process conditions were obtained through this series of experiments.

关 键 词：正交设计 SI基 复合衬底 工艺优化 

分 类 号：TN213[电子电信—物理电子学]