射频反应磁控溅射生长ZAO薄膜的光电性质  

Preparation and Optical Electrical Properties of ZAO Thin Film by Reaction RF Magnetron Sputtering

作　　者：许飞[1] 朱江转 陆慧[1] 罗锻斌 谢海芬[1] XU Fei;ZHU Jiangzhuan;LU Hui;LUO Duanbin;XIE Haifen(School of Science,East China University of Science and Technology,Shanghai 200237,China)

机构地区：[1]华东理工大学理学院

出　　处：《实验室研究与探索》2019年第11期46-50,共5页Research and Exploration In Laboratory

基　　金：2018年度本科实验实践教学改革与建设立项(BK0121004)

摘　　要：采用RF反应磁控溅射技术在不同制备条件下制备了Al掺杂ZnO薄膜(ZAO),研究了不同条件下ZAO薄膜的光电性质.结果表明,薄膜电阻主要由晶界电阻决定,且导电性随Ar∶O2中O2含量增加而减小.薄膜具有强烈的紫外吸收特性,带隙大多超过3.3 eV,可见光区的透明性大于80%,并且透过率和Eg随Ar∶O2中O2含量的增加而增加,薄膜在紫光区域具有较强的光致发光特性,掺铝使光发射峰增强并蓝移.With different conditions,the preparation and optical electrical properties of ZAO films prepared by RFmagnetron sputtering are studied.The optical electrical properties of ZAO thin films under different conditions are studied.It is founded that the film resistance is mainly determined by the grain boundary resistance,and the conductivity decreases with the increase of oxygen content in the argon oxygen ratio.The films have strong ultraviolet absorption characteristics,most of the band gaps are more than 3.3 eV,and the transparency in visible region is more than 80%.The transmittance and Eg increase with the increase of oxygen content in the argon oxygen ratio.The films have strong photoluminescence characteristics in the purple region.Aluminum doping enhances the emission peaks and blue shifts.

关 键 词：ZAO薄膜 磁控溅射 基底温度 光电性质 

分 类 号：O433[机械工程—光学工程]