X射线和重离子辐射对GaN基发光二极管的影响  

Influence of X-Ray and Heavy Ion Radiation on Properties of GaN-Based LEDs

作　　者：王磊[1,2] 李博[1,2] 张学文[1,2] 李彬鸿[1,2] 罗家俊 刘新宇 袁清习[4] WANG Lei;LI Bo;ZHANG Xuewen;LI Binhong;LUO Jiajun;LIU Xinyu;YUAN Qingxi(Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China;Key Laboratory of Silicon Device Technology,Chinese Academy of Sciences,Beijing 100029,China;University of Chinese Academy of Sciences,Beijing 100049,China;Institute of High Energy Physics,Chinese Academy of Sciences,Beijing 100049,China)

机构地区：[1]中国科学院微电子研究所,北京100029 [2]中国科学院硅器件技术重点实验室,北京100029 [3]中国科学院大学,北京100049 [4]中国科学院高能物理研究所,北京100049

出　　处：《微处理机》2019年第6期1-5,共5页Microprocessors

摘　　要：针对航天军事核物理等应用环境,研究了白光光谱高能X射线和30MeV Si重离子辐射效应对蓝光InGaN/GaN多量子阱发光二极管的阈值电压、发光功率、发光波长及色坐标的影响,得出二极管阈值电压和发光功率随Si粒子注量的变化规律。对比研究结果指出,相比于辐射电离效应,辐射引起的位移效应、热峰效应和载流子移除效应是影响发光二极管特性的主要因素;重离子辐照对发光特性的影响早于电学特性,且辐射主要引起发光二极管色坐标Y分量的变化。Aiming at the application environment of space,military,nuclear physics,ect,the effects of white light spectral high energy X-ray and 30 MeV Si heavy ion radiation on the threshold voltage,luminous power,luminescence wavelength and color coordinate of blue InGaN/GaN multi-quantum well LEDs were studied.The regular changing pattern of diode threshold voltage and luminous power with Si particle fluence is obtained.The comparison results show that the displacement effect,thermal peak effect and carrier removal effect caused by radiation are the main factors for the degradation of LEDs compared to the radiation ionization effect.It also could be seen that the influence of heavy ion irradiation on luminous characteristics is earlier than that of electrical characteristics,and the radiation mainly causes the change of the Y component of the color coordinate.

关 键 词：INGAN/GAN多量子阱 发光二极管 可见光通讯 X射线 重离子 辐射效应 位移损伤 

分 类 号：TN312.8[电子电信—物理电子学]