宽禁带器件在1kV高频直流谐振变换器中的应用与对比  

Applications and Comparison of Wide-bandgap Devices in 1 kV High-frequency Resonant DC-DC Converters

作　　者：顾占彪[1] 李志斌 石伟杰 唐家承 张之梁[2] 任小永[2] GU Zhanbiao;LI Zhibin;SHI Weijie;TANG Jiacheng;ZHANG Zhiliang;REN Xiaoyong(The 13th Research Institute,China Electronics Technology Group Corporation,Shijiazhuang 050051,China;Areo-Power Sci-tech Center,Nanjing University of Aeronautics and Astronautics,Nanjing 211106,China)

机构地区：[1]中国电子科技集团公司第十三研究所,石家庄050051 [2]南京航空航天大学航空电源重点实验室,南京211106

出　　处：《电源学报》2020年第1期150-161,共12页Journal of Power Supply

基　　金：国家优秀青年科学基金资助项目（51722702）~~

摘　　要：与传统硅Si(silicon)功率器件相比,第3代宽禁带功率半导体器件,如碳化硅SiC(silicon carbide)和氮化镓GaN(gallium nitride)功率器件,由于具有高功率密度、耐高温和抗辐照等特点,得到了越来越广泛的应用。分析了基于SiC和GaN的2种1 kV输入、32 V/3 kW输出的LLC谐振变换器,通过仿真和实验探究了变压器匝间电容对谐振电流的影响;并采取分离谐振腔、改变变压器绕组结构的方法,减小谐振电流的畸变,保证了开关管ZVS的实现。由于大匝比变压器难以平面化,2种变换器均采用原边串联、副边并联的矩阵变压器,实现自动均压、均流,降低电压和电流应力,提高功率密度和热稳定性。为了进一步提高效率,GaN LLC变换器副边采用同步整流。最后,本文从拓扑、损耗、整机尺寸、可靠性以及功率密度等方面对比分析了这2种变换器的优缺点,为器件的选择提供了参考依据。Compared with the conventional silicon(Si)power devices,the third-generation wide-bandgap power se-miconductor devices including silicon carbide(SiC)and gallium nitride(GaN)power devices have been increasingly ap-plied owing to their characteristics,such as high power density,high temperature resistance,and strong anti-irradiation capability.Two kinds of LLC resonant converters with input of 1 kV and output of 32 V and 3 kW were analyzed,which were based on SiC and GaN,respectively.The effects of transformer turn-to-turn capacitance on resonant current were studied by using the simulation and experimental methods.In addition,to reduce the distortion in resonant current and ensure the realization of ZVS,the methods of splitting resonant tanks and changing the structure of transformer winding were adopted.Since the transformer with a large turns ratio was difficult to planarize,both converters used a matrix transformer with an input-series-output-parallel structure to realize automatic voltage and current sharing,reduce voltage and current stress,and improve the power density and thermal stability.To further improve the corresponding efficiency,the secondary side of the GaN LLC converter adopted synchronous rectification.Finally,the advantages and disadvan-tages of these two converters were compared and analyzed from aspects such as topology,loss,overall size,reliability,and power density,providing reference for device selection.

关 键 词：宽禁带器件 SIC GAN DC-DC 高压 谐振变换器 

分 类 号：TM46[电气工程—电器]