铜锌锡硫带边电子结构及缺陷态的光学表征  

Optical characterization of bandedge electronic structure and defect states in Cu2ZnSnS4

作　　者：马骕驭 马传贺[1] 卢小双 李国帅 孙琳[1] 陈晔[1] 越方禹[1] 褚君浩[1,2] MA Su-Yu;MA Chuan-He;LU Xiao-Shuang;LI Guo-Shuai;SUN Lin;CHEN Ye;YUE Fang-Yu;CHU Jun-Hao(Key Laboratory of Polar Materials and Devices,School of Physics and Electronic Science,East China Normal University,Shanghai 200241,China;National Laboratory for Infrared Physics,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,China)

机构地区：[1]华东师范大学物理与电子科学学院极化材料与器件教育部重点实验室,上海200241 [2]中国科学院上海技术物理研究所红外物理国家重点实验室,上海200083

出　　处：《红外与毫米波学报》2020年第1期92-98,共7页Journal of Infrared and Millimeter Waves

基　　金：国家自然科学基金(61790583,61874043,61874045,61574057;61574059);航空科学基金(201824X8001);国家重点研发计划(2016YFB0501604)~~

摘　　要：利用吸收、光电流和光致发光等光谱表征并结合理论报道,分析了缺陷态丰富的铜锌锡硫半导体材料的光学带隙、带尾态和深浅杂质能级,揭示了Sn_(Zn)相关的缺陷态是影响铜锌锡硫带边电子结构的关键因素,其中高浓度的中性缺陷簇[2Cu_(Zn)+Sn_(Zn)]能导致带隙明显窄化,而离子性缺陷簇[Cu_(Zn)+Sn_(Zn)]是主要的深施主缺陷态,同时存在的大量带尾态引起带边相关的光致发光峰明显红移。贫铜富锌条件下,适当减少锡含量,可有效抑制与Sn_(Zn)相关的缺陷簇,并避免带隙的窄化。The bandedge electronic structure including the optical bandgap,band-tail states,and deep/shallow donor and acceptor levels in Cu2ZnSnS4 semiconductor was analyzed by absorption,photocurrent and photoluminescence spectroscopy,and the theoretical reports.It is revealed that the SnZn-related defect in Cu2ZnSnS4 with abundant defect states is one of the key factors affecting the band-edge electronic structure.High concentration of the neutral defect cluster[2CuZn+SnZn]can narrow the band gap substantially,while the partially-passivated(ionic)defect cluster[CuZn+SnZn]is the main deep donor defect.A large number of band-tail states are responsible for the obvious red-shift of the bandedge-related photoluminescence transition energy.These detrimental defects related to SnZn can be effectively suppressed by properly reducing the Sn content in the copper-poor and zincrich growth condition,which also avoids the narrowing of the optical bandgap of the Cu2ZnSnS4 absorption layer.

关 键 词：禁带宽度 半导体缺陷 光谱表征 铜锌锡硫 

分 类 号：O474[理学—半导体物理]