宽禁带半导体氧化镓晶体和器件研究进展  

Research Progress in the Crystal Growth and Devices of Wide-Bandgap β-Ga2O3

作　　者：陶绪堂 穆文祥 贾志泰 TAO Xutang;MU Wenxiang;JIA Zhitai(State Key Laboratory of Crystal Materials,Shandong University,Jinan 250100,China)

机构地区：[1]山东大学晶体材料国家重点实验室

出　　处：《中国材料进展》2020年第2期113-123,共11页Materials China

基　　金：国家自然科学基金资助项目(51321091,51202128,51227002,1323002,51932004)

摘　　要：β-Ga2O3作为新型宽禁带半导体材料,近年来受到了人们的广泛关注。β-Ga2O3禁带宽度可达4. 7 e V,相比于第三代半导体SiC和Ga N,具有禁带宽度更大、击穿场强更高、Baliga品质因子更大、吸收截止边更短、生长成本更低的优点,有望成为高压、大功率、低损耗功率器件和深紫外光电子器件的优选材料。此外,β-Ga2O3单晶可以通过熔体法生长,材料制备成本相对较低,有利于大规模应用。重点介绍了β-Ga2O3单晶的生长及工艺优化,然后对晶体加工、性能表征、光电探测及功率器件应用等方面进行了讨论,并展望了β-Ga2O3晶体未来的发展方向。As a new wide-bandgap semiconductor,β-Ga2O3 has attracted a lot of attention in recent years. The bandgap of β-Ga2O3 is as large as 4. 7 eV,as a new type of ultra-wide bandgap semiconductor,it has the advantages of larger bandgap,higher breakdown field,bigger Baliga FOM,shorter absorption edge and lower cost,compared to the third-generation semiconductors such as SiC and GaN. Therefore,β-Ga2O3 may become a preferred material for high voltage,high power,low loss power devices,and deep UV optoelectronic devices. Furthermore,β-Ga2O3 single crystals could be grown by melt methods with low cost and high growth speed which is beneficial for large-scale applications. In this paper,the main considerations are focused on single crystal growth and technology optimizations. Besides,the crystal processing,properties characterization,photodetectors,power devices are introduced and future developments are discussed.

关 键 词：β-Ga2O3 宽禁带半导体 单晶生长 晶体加工 紫外探测器 肖特基二极管 

分 类 号：O782[理学—晶体学]