3300 V全SiC MOSFET功率器件开关特性研究  

Research on Switching Characteristics of 3300 V Full SiC MOSFET Power Module

作　　者：孙康康 陈燕平 忻兰苑 王晓年 余开庆 胡长风 SUN Kangkang;CHEN Yanping;XIN Lanyuan;WANG Xiaonian;YU Kaiqing;HU Changfeng(CRRC ZIC Research Institute of Electrical Technology&Material Engineering,Zhuzhou,Hunan 412001,China)

机构地区：[1]中车株洲所电气技术与材料工程研究院,湖南株洲412001

出　　处：《机车电传动》2020年第1期34-37,48,共5页Electric Drive for Locomotives

基　　金：国家重点研发计划项目(2017YFB1200902)。

摘　　要：为更好地发挥全SiC器件的开关速度快、损耗低等优势,研究了某款3300 V全SiC MOSFET器件的开关特性。首先,通过理论分析阐述了开关变化过程,并给出了可量化的计算方法;其次,从驱动电阻、结温、回路杂散电感等方面探寻了开关特性变化的规律;最后,在样机上进行了验证。结果表明,文章中所述优化开关特性的方法对全SiC逆变器的工程应用有一定的指导意义。Depending on the advantages of SiC MOSFET with faster switching and lower on-state losses,the switching characteristics of a 3300 V full SiC MOSFET device were studied to make better use of the device.Firstly,the switching processes of the SiC device were illustrated in theory,and the quantifiable method was provided;secondly,the effects of gate drive resistors,junction temperature and stray inductance on switching characteristics were investigated;finally,a prototype test was carried out.The results indicated that the switching characteristics optimizing method as discussed can provide application guidance to the full SiC invertors.

关 键 词：3300 V全SiC MOSFET 开关特性 驱动电阻 结温 杂散电感 

分 类 号：TN304.24[电子电信—物理电子学] TN386.1