nBn型InAsSb探测器的材料及器件研究  

Research on Materials and Devices of InAsSb nBn Detector

作　　者：周朋[1] 温涛[1] 邢伟荣[1] 刘铭[1] ZHOU Peng;WEN Tao;XING Wei-rong;LIU Ming(North China Research Institute of Electro-Optics,Beijing 100015,China)

机构地区：[1]华北光电技术研究所,北京100015

出　　处：《红外》2019年第11期7-12,共6页Infrared

摘　　要：nBn型红外探测器可有效抑制产生-复合电流,进而提高探测器的工作温度。由于制备工艺可移植于Ⅲ/Ⅴ族成熟工艺以及存在晶格完全匹配的衬底等优势,InAsSb/AlAsSb材料是nBn型红外探测器的首选。简单介绍了InAsSb/AlAsSb nBn型红外探测器的研究现状、工作原理以及近期的研究成果。通过生长试验实现了良好的材料表面质量、晶体质量和光学性能。相关结果表明,在制备器件时,nBn结构中势垒层的掺杂浓度不应低于8×10^16 cm^-3,否则就不利于减小nBn型器件的暗电流。The nBn infrared detector can effectively suppress the generation-recombination current,thereby increasing the operating temperature of the detector.InAsSb/AlAsSb materials are preferred for nBn infrared detectors due to the advantages that the fabrication process can be transplanted from matureⅢ/Ⅴprocesses and there are perfectly lattice-matched substrates.The research status,working principle and recent achievements of InAsSb/AlAsSb nBn infrared detector are briefly introduced.Through the growth test,good material surface quality,crystal quality,and optical properties are achieved.The related results show that when preparing the device,the doping concentration of the barrier layer in the nBn structure should not be lower than 8×10^16 cm^-3,otherwise it will not help to reduce the dark current of the nBn device.

关 键 词：nBn结构 INASSB 高工作温度 暗电流 

分 类 号：TN215[电子电信—物理电子学]