基于0.25μm GaN的2~12 GHz连续波10 W功率放大器  

A 2~12 GHz Continuous Wave 10 W Power Amplifier Based on 0.25μm GaN

作　　者：刘士奇 周云 周文硕[1] LIU Shiqi;ZHOU Yun;ZHOU Wenshuo(The 54th Research Institute of CETC,Shijiazhuang 050081,China;Military Representative Office Stationed in Shijiazhuang Region,PLA Army Beijing Military Representative Bureau,Shijiazhuang 050081,China)

机构地区：[1]中国电子科技集团公司第五十四研究所,河北石家庄050081 [2]陆军北京军代局驻石家庄地区军代室,河北石家庄050081

出　　处：《无线电工程》2020年第5期395-399,共5页Radio Engineering

摘　　要：针对超宽带、高功率和高效率放大器的设计和制作难点问题,设计了一种基于0.25μm GaN工艺和以SiC为衬底的高电子迁移率晶体管技术(High Electron Mobility Transistor,HEMT),实现了2~12 GHz高功率和高效率的宽带单片微波集成电路放大器。通过采用非均匀分布式放大电路结构、优化电路的静态直流工作点、采用宽带匹配技术等措施,保证了电路的带宽、功率和效率指标。该单片放大器芯片尺寸为3.35 mm×2.60 mm,芯片测试结果表明在2~12 GHz频率范围内,漏极电压28 V、连续波条件下,放大器的小信号增益大于11 dB,大信号增益大于7 dB,饱和输出功率大于40 dBm,功率附加效率(Power Added Efficiency,PAE)为30%~45%。To address the issues of designing and manufacturing the power amplifier with ultra-broadband,high power and high efficiency,a broadband monolithic microwave integrate circuit power amplifier(PA)based on 0.25μm GaN and SiC high electron mobility transistor(HEMT)process is presented.The performances of high power and high efficiency in the frequency range of 2~12 GHz are realized by using of non-uniform distributed amplifier structure,the static DC operation point optimization technology and the broadband impedance matching technology.The size of chip is 3.35 mm×2.60 mm.The measured results show that the small signal gain of the PA is greater than 11 dB,the large signal gain is above 7 dB,the saturated output power is more than 40 dBm,and the power added efficiency(PAE)is between 30% and 45% under the condition of continuous wave excitation and drain voltage of 28 V in the frequency range of 2~12 GHz.

关 键 词：GAN高电子迁移率晶体管 连续波 分布式放大器 功率附加效率 

分 类 号：TN722[电子电信—电路与系统]