基于三维模型的InGaP/GaAs HBT单粒子效应仿真  

Simulation on single event effects of InGaP/GaAs HBT based on three-dimensional model

作　　者：温景超 李旭红 吴立强[1] 王宇[1] 何忠名 WEN Jingchao;LI Xuhong;WU Liqiang;WANG Yu;HE Zhongming(China Academy of Launch Vehicle Technology,Beijing 100076,China)

机构地区：[1]中国运载火箭技术研究院,北京100076

出　　处：《电子元件与材料》2020年第4期90-94,共5页Electronic Components And Materials

摘　　要：为全面评估航天型号用元器件的抗辐射性能,对InGaP/GaAs异质结双极晶体管(Heterojunction Bipolar Transistor,HBT)的单粒子效应进行了仿真研究。首先,介绍了空间辐射环境中重离子诱发器件产生单粒子瞬态脉冲的机理。然后,建立了InGaP/GaAs HBT器件三维仿真模型,并利用蒙特卡罗方法模拟了不同能量的C、F、Cl、Br、I等重离子在器件中的射程和LET值。最后,基于ISE-TCAD仿真软件对器件的单粒子瞬态脉冲电流曲线进行了仿真和分析。结果表明:重离子在器件中产生的集电极瞬态脉冲电流可达几百微安,集电极瞬态脉冲电流与重离子的能量成反比,与离子的原子序数成正比。由此可知,InGaP/GaAs HBT器件对单粒子效应比较敏感,且对不同重离子的敏感程度不同。这可以为航天型号用元器件的设计选型和可靠性评估提供技术支撑。In order to comprehensively evaluate the radiation-tolerant performance of aerospace components,the single event effects of InGaP/GaAs heterojunction bipolar transistor(HBT)were simulated and studied.Firstly,the mechanism of single event transient pulse induced by heavy ions from space radiation environment was described.Then,a three-dimensional simulation model of InGaP/GaAs HBT was built.The range and LET of heavy ions include C,F,Cl,Br and I in the device were simulated with Monte-Carlo method.Finally,the single event transient pulse current curves were simulated and analyzed with the ISE-TCAD simulation software.The results show that up to hundreds of microamps of collector transient pulse current is generated by heavy ions,and the collector transient pulse current is inversely proportional to the energy of heavy ions and directly proportional to the atomic number of heavy ions.Accordingly,InGaP/GaAs HBT is sensitive to single event effects and has different sensitivity to different heavy ions.This work can provide technical support for the selection and reliability assessment of aerospace components.

关 键 词：InGaP/GaAs异质结双极晶体管 三维模型 单粒子效应 重离子 瞬态脉冲电流 

分 类 号：TN325.[电子电信—物理电子学]