高压eGaN HEMT开关行为及其影响因素研究  

Analysis of switching behavior and influence factor of high voltage eGaN HEMT

作　　者：彭子和 秦海鸿[1] 张英[1] 修强 储师舜 PENG Zi-he;QIN Hai-hong;ZHANG Ying;XIU Qiang;CHU Shi-shun(Key Laboratory for More-Electric-Aircraft Power System of Ministry of Industry and Information Technology,Nanjing University of Aeronautics and Astronautics,Nanjing 211106,China;FALAB Laboratory Company,Suzhou 215021,China)

机构地区：[1]多电飞机电气系统工业与信息化部重点实验室,南京航空航天大学,江苏南京211106 [2]苏州华碧微科检测技术有限公司,江苏苏州215021

出　　处：《电工电能新技术》2020年第4期17-26,共10页Advanced Technology of Electrical Engineering and Energy

基　　金：国家自然科学基金项目(51677089);中央高校基本科研业务费专项资金项目(NJ20160047);南京航空航天大学研究生创新基地(实验室)开放基金项目(kfjj20170308);江苏省研究生科研与实践创新计划项目(KYCX18_0287)。

摘　　要：为了探究高压eGaN HEMT的开关行为及其影响因素,首先详细分析了eGaN HEMT的开关过程,推导出开关各个阶段的持续时间及影响因素,并将其归纳为器件参数、驱动电路参数和工况,通过实验对eGaN HEMT开关过程和驱动电路参数以及工况对eGaN HEMT高速开关行为的影响规律进行验证,探究了实际电路中存在寄生电感对开关行为的影响。实验结果表明,调整驱动电路参数可以提高开关速度,降低开关损耗,但不可避免地会引起电压、电流的振荡和过冲,设计驱动电路时需要折衷考虑,工况对开关时间影响较大,桥臂电路应用需要根据不同的工况调整死区时间以达到最优的效果,寄生电感会使开关过程中的电流、电压出现振荡,影响开关速度和可靠性,实验结果为eGaN HEMT驱动电路的设计和应用提供了有益的帮助。In order to clarify the switching behaviour and influence factors of high voltage eGaN HEMT,the detailed switching process of eGaN HEMT with loop parasitic parameters is analyzed and the duration of each stage and its influence factors are confirmed which can be inducted as device parameter,drive circuit parameter and working condition.The switching process of eGaN HEMT and the influence of driver circuit parameter and working condition are verified through the experiment,then the influence of parasitic inductance on switching characteristics of eGaN HETM is explored.The result shows that adjusting drive circuit parameter can speed up the switching process and reduce the switching loss,but will inevitably cause oscillation and overshoot of voltage and current,which need to be tradeoff.The working condition has great influence on the switching time of eGaN HEMT,so the dead time need to be adjusted according to different working conditions in bridge arm circuit.The parasitic inductance will induce the oscillation in current and voltage during the switching process and will have influence on the switching speed and reliability.The conclusions may be helpful for the design of drive circuit and application of high eGaN HEMT.

关 键 词：eGaN HEMT 驱动电路 开关行为 工况 驱动电路参数 寄生电感 

分 类 号：TM464[电气工程—电器]