基于无掩模光刻的高精度ITO电极湿法刻蚀工艺研究  

High-Precision ITO Electrode Wet Etching Technology Based on Maskless Lithography

作　　者：殷艺 刘志坚 王赛杰 武森[1] 严志军[1] 潘新祥 Yin Yi;Liu Zhijian;Wang Saijie;Wu Sen;Yan Zhijun;Pan Xinxiang(Marine Engineering College of Dalian Maritime University,Dalian,Liaoning 116026,China;College of Ocean Engineering,Guangdong Ocean University,Zhanjiang,Guangdong 524088,China)

机构地区：[1]大连海事大学轮机工程学院,辽宁大连116026 [2]广东海洋大学海洋工程学院,广东湛江524088

出　　处：《激光与光电子学进展》2020年第3期210-216,共7页Laser & Optoelectronics Progress

基　　金：中央高校基本科研业务费专项基金(3132019189)。

摘　　要：氧化铟锡(ITO)导电膜具有电阻率低、透光性好、耐高温等优点,在光电领域具有重要应用。现有加工方法得到的ITO电极尺寸一般为10~200μm,这限制了ITO电极在微纳领域的应用,为解决此限制,在传统湿法刻蚀方法的基础上,利用无掩模光刻技术对ITO玻璃表面光刻胶进行高精度曝光,再通过优化曝光、显影及刻蚀等过程,最终加工出尺寸仅为2μm的电极。所提方法所加工的电极具有线性度高、无钻蚀、误差小等优点,为ITO电极在微纳领域应用开发提供了有现实意义的参考。Indium-tin-oxide(ITO)conductive films provide low resistivity,good light transmittance,and high temperature resistance;they have important applications in the field of optoelectronics.The size of the ITO electrode obtained by the existing process method is generally 10-200μm,which limits the application of the ITO electrode in the field of micro-nano technique.This work discusses the development of a fabrication method based on the traditional wet etching process and high-precision exposure of ITO glass surface photoresist by maskless lithography.The exposure,development,and etching processes are optimized to obtain an electrode with only 2-μm width.The developed electrode has the advantages of high linearity,no undercut,and small error,thus providing a realistic reference for the application development of ITO electrode in the micro-nano field.

关 键 词：光学设计 ITO电极 湿法刻蚀 无掩模光刻 高精度 

分 类 号：TN305.7[电子电信—物理电子学]