193 nm深紫外光刻胶用成膜树脂的研究进展  

Development of Matrix Resins for 193 nm Deep UV Photoresist

作　　者：魏孜博 马文超 邱迎昕 WEI Zibo;MA Wenchao;QIU Yingxin(Yanshan Branch,Sinopec BRICI,Beijing 102500,P.R.China;Rubber and Plastic Synthesis National Engineering Research Center,Beijing 102500,P.R.China)

机构地区：[1]中国石油化工股份有限公司北京化工研究院燕山分院,北京102500 [2]橡塑新型材料合成国家工程研究中心,北京102500

出　　处：《影像科学与光化学》2020年第3期409-415,共7页Imaging Science and Photochemistry

基　　金：中石化总部项目(G3365-2019-Z1912)资助。

摘　　要：本文综述了用于193 nm深紫外光刻胶的主体成膜树脂的种类及常用合成单体的研究进展,包括聚(甲基)丙烯酸酯体系、环烯烃-马来酸酐共聚物(COMA)体系、乙烯醚-马来酸酐共聚物(VEMA)体系、降冰片烯加成聚合物体系、环化聚合物体系、有机-无机杂化树脂体系以及光致产酸剂(PAG)接枝聚合物主链型等,并分析了目前关于曝光、分辨率和抗蚀刻性能方面存在的问题及未来的发展方向。The research progress of the main matrix resins and common synthetic monomers for 193 nm deep UV photoresist was reviewed.The film-forming resin includes poly(methyl)acrylate,cycloolefin-maleic anhydride(COMA),ethylene ether-maleic anhydride(VEMA),norborneene addendum polymer,cyclized polymer,organic-inorganic hybrid resin,and PAG graft on polymer backbone.The existing problems about exposure,resolution and etch resistance and the future development direction were also discussed.

关 键 词：光刻胶 成膜树脂 曝光 分辨率 抗蚀刻性能 

分 类 号：TQ577[化学工程—精细化工] TQ320.7