齐纳二极管电子辐照特性研究  

Study on the Characteristics of Zener Diode after Electron Irradiation

作　　者：明思汀 王多为 唐常钦 马瑶 李芸 杨治美[1,2] 黄铭敏 龚敏 MING Siting;WANG Duowei;TANG Changqin;MA Yao;LI Yun;YANG Zhimei;HUANG Mingmin;GONG Min(Key Lab of Microelectronics Sichuan Province,College of Physics,Sichuan University,Chengdu 610064,China;Key Laboratory of Radiation Physics and Technology of Ministry of Education,Sichuan University,Chengdu 610064,China)

机构地区：[1]四川大学物理学院微电子技术四川省重点实验室,成都610064 [2]四川大学辐射物理及技术教育部重点实验室,成都610064

出　　处：《电子与封装》2020年第5期60-65,共6页Electronics & Packaging

摘　　要：研究了电子辐照前后齐纳二极管在不同温度下的直流参数特性以及其动态响应。根据直流伏安特性提取齐纳管理想因子n,发现高注量下n有明显增大,表明辐照引入了复合中心。该器件室温下的直流参数稳定,辐照引起的变化不明显;较高温度下,击穿电压和正向压降等变化稍大。在动态响应的研究中,瞬态电压消失后,电流迅速减小并产生了随时间衰减的振荡。高注量的样品振荡时间相较于低注量的样品有明显的延长,这个延长在器件室温存放之后发生了消退。The direct current(DC)parameter characteristics at different temperatures and dynamic response of Zener diode before and after electron irradiation were researched.According to the characteristics of DC voltammetry,the n-factor of Zener diode was extracted,and it was found that the n-factor increased significantly at high fluence.It shows that the irradiation introduced the composite center.But the DC parameters of the device were stable,and the changes caused by irradiation were not significant.At higher temperature,the changes of breakdown voltage and forward voltage drop variation were slightly larger.In the study of dynamic response,when the transient voltage disappeared,the current decreased rapidly and generated an oscillationattenuating with time.The oscillation time of the sample with high fluence was obviously longer than that of the sample with low fluence,and this extension disappeared after the device was stored at room temperature.

关 键 词：齐纳二极管 电子辐照 直流特性 动态响应 

分 类 号：O475[理学—半导体物理]