高增益GaN基PIN雪崩二极管的制备及p-GaN层载流子浓度的估算  

Fabrication of High Gain GaN Based PIN Avalanche Diode and Estimation of p-GaN Layer Carrier Concentration

作　　者：曹子坤 刘宗顺[1] 江德生[1] 朱建军[1,3] 陈平 赵德刚[1,3] CAO Zi-kun;LIU Zong-shun;JIANG De-sheng;ZHU Jian-jun;CHEN Ping;ZHAO De-gang(State Key Laboratory of Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;College of Materials Science and Optoelectronic Technology,University of Chinese Academy of Sciences,Beijing 100049,China;Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing 100049,China)

机构地区：[1]中国科学院半导体研究所集成光电子学国家重点实验室,北京100083 [2]中国科学院大学材料科学与光电技术学院,北京100049 [3]中国科学院大学材料科学与光电工程中心,北京100049

出　　处：《发光学报》2020年第6期707-713,共7页Chinese Journal of Luminescence

基　　金：国家重点研发计划(2018YFB0406903,2016YFB0401801,2016YFB0401803);国家自然科学基金(61674138,61674139,61604145,61574135,61574134,61904172);科学挑战计划(TZ2016003)资助项目。

摘　　要：介绍了GaN基pin雪崩探测器的制作过程和测试结果。制作的器件在71 V反向偏压下发生雪崩,倍增因子达到5×104。我们发现,p层载流子浓度是影响器件性能的重要参数。结合电场强度分布的分析,本文提出了一种估算p层载流子浓度的方法,进一步计算得到刚好雪崩击穿时的最大电场值为2.6 MV/cm,与以往GaN雪崩器件所报道的研究结果相似。最后,霍尔测试和SIMS测量p层载流子浓度的结果与模型计算的估算值吻合。The fabrication process and test results of the GaN based pin avalanche detector are described in detail.The avalanche in obtained device occurs at a reverse bias of 71 V,and the multiplication factor reaches 5×104.It is found that the p-layer carrier concentration is an important parameter affecting the device performance.Combined with the analysis of electric field intensity distribution,a method to estimate the carrier concentration in p-layer is proposed,and further calculation indicates that the maximum electric field value at avalanche breakdown is 2.6 MV/cm,which is similar to the previously reported values for GaN avalanche detectors.At last,Hall test and Secondary ion mass spectroscopy(SIMS)results are consistent with those estimated by the model calculation.

关 键 词：氮化镓 雪崩探测器 泊松方程 

分 类 号：TN36[电子电信—物理电子学]