一种250V高动态阻抗恒流器件优化设计  

Optimal Design of a 250 V High Dynamic Impedance Current Regulating Diode

作　　者：孟培培 乔明[1] MENG Peipei;QIAO Ming(State Key Laboratory of Electronic Thin Films and Integrated Device,UESTC,Chengdu 610054,China)

机构地区：[1]电子科技大学电子薄膜与集成器件国家重点实验室,成都610054

出　　处：《电子与封装》2020年第6期48-53,共6页Electronics & Packaging

摘　　要：设计了一种250 V高动态阻抗恒流器件,通过在外延层中刻蚀填充氧化槽,形成体内横向沟道结构,提升恒流器件动态阻抗,使器件具有优异的恒流特性。利用MEDICI仿真软件对器件的外延层厚度和浓度、氧化槽深度、调沟注入剂量及栅氧厚度等参数进行模拟仿真,探究各参数对器件特性的影响。最终设计得到的恒流器件击穿电压为300 V,夹断电压约3.5 V,恒流工作区间为5~250 V,在20 V条件下动态阻抗达到189 MΩ·μm,相较于传统恒流器件提升十几倍以上。建立解析模型后采用混合仿真模式对典型LED驱动电路进行模拟,结果显示负载电流相对波动变化率仅为1.5%,实现了LED负载的恒流驱动。A 250 V current regulating diode(CRD)with high dynamic impedance is designed in detail.The device acquires excellent current regulating characteristics by etching and filling the oxide trench to form a lateral channel structure in the epitaxy layer,which can enhance the dynamic impedance of the CRD.In order to explore the influence of the various parameters on the characteristics of the device,MEDICI simulations are performed to analyze the thickness and concentration of the epitaxy layer,the depth of the oxide trench,the implantation dose of the depletion channel and the thickness of the gate oxide.The results of the device optimization show that the breakdown voltage is 300 V,the pinch-off voltage is about 3.5 V,the current regulating range is 5-250 V,and the dynamic impedance reaches 189 MΩ·μm under 20 V forward voltage,which is more than ten times higher compared with the traditional CRD.A typical circuit for driving light emitting diode(LED)is simulated through hybrid simulation model after creating the analytical model of the CRD.The relative fluctuation rate of load current is only 1.5%,indicating that LEDs have been driven well under a constant current.

关 键 词：恒流器件 击穿电压 夹断电压 动态阻抗 LED驱动 

分 类 号：TN405[电子电信—微电子学与固体电子学]