高压SOI pLDMOS器件电离辐射总剂量效应研究  

Study on Total Dose Effect of Ionizing Radiation of High-Voltage SOI pLDMOS Devices

作　　者：马阔 乔明[1] 周锌[1] 王卓[1] MA Kuo;QIAO Ming;ZHOU Xin;WANG Zhuo(State Key Laboratory of Electronic Thin Films and Integrated Device,UESTC,Chengdu 610054,China)

机构地区：[1]电子科技大学电子薄膜与集成器件国家重点实验室,成都610054

出　　处：《电子与封装》2020年第6期58-62,共5页Electronics & Packaging

基　　金：四川省科技计划资助项目(2019YFG0093)。

摘　　要：研究了总剂量辐射致使高压SOI pLDMOS器件电学性能的退化,报道了在300 krad(Si)辐射下,高压SOI pLDMOS器件耐压的退化以及阈值电压的负向漂移。通过仿真软件对器件的基础电学特性进行了仿真优化,并且对器件电学性能的退化进行了仿真探究,分析器件性能退化的原因。This paper researches the degradation of the electrical performance of high-voltage SOI pLDMOS device caused by total dose radiation,furthermore,this paper reports the decrease of breakdown voltage and the negative drift of the threshold voltage of the high-voltage SOI pLDMOS device under 300 krad(Si)total dose radiation.By using simulation software to simulate and optimize the basic electrical characteristics of the device,moreover,the degradation of the electrical performance of the device was simulated and the reasons for the degradation of the device were investigated.

关 键 词：总剂量辐射 SOI LDMOS 击穿电压 阈值电压 

分 类 号：TN303[电子电信—物理电子学]