石墨烯上外延GaN薄膜的取向演变研究  

Orientation Evolution Study of Epitaxial GaN Films on Graphene

作　　者：周浩 徐俞[3] 曹冰[1,2] 徐科 王钦华[1,2] ZHOU Hao;XU Yu;CAO Bing;XU Ke;WANG Chinhua(School of Optoelectronic Science and Engineering, Soochow University, Suzhou 215006, China;Key Lab of Advanced Optical Manufacturing Technologies of Jiangsu Province and Key Lab of Modern Optical Technologies of Education Ministry of China, Suzhou 215006, China;Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy Sciences (CAS), Suzhou 215123, China)

机构地区：[1]苏州大学光电科学与工程学院,苏州215006 [2]江苏省先进光学制造技术重点实验室和教育部现代光学技术重点实验室,苏州215006 [3]中国科学院苏州纳米技术与纳米仿生研究所,苏州215123

出　　处：《人工晶体学报》2020年第5期794-798,共5页Journal of Synthetic Crystals

基　　金：国家重点研发计划(2017YFB0404100)。

摘　　要：本文研究了在石墨烯上生长GaN薄膜时晶体取向的变化。采用AlN成核层辅助生长,GaN由取向相差较大的小晶粒,逐渐合并为与石墨烯取向一致的晶粒,最终形成了约4.6μm厚的GaN薄膜。通过EBSD和XRD证实了GaN晶体取向一致性的提高,拉曼光谱也表明GaN晶体的高质量。The evolution of crystal orientation of GaN films grown on graphene was investigated.Assisted with AlN nucleation layer,GaN was gradually merged with grains which had the same orientation of graphene from smaller polycrystalline grains.Finally,a GaN film with a thickness of about 4.6μm was formed.EBSD and XRD have confirmed that the overall orientation of GaN becomes consistent,and Raman spectrum also shows the high crystalline quality of the GaN.

关 键 词：GAN 石墨烯 ALN 晶体取向 

分 类 号：TN304[电子电信—物理电子学]