基于新型NiPbAu基底的金丝楔形键合工艺研究  

Research on Wedge Bonding Process of Gold Wire on NiPdAu Coating Substrate

作　　者：陈帅 赵文忠 张飞[1] 赵志平[1] CHEN Shuai;ZHAO Wenzhong;ZHANG Fei;ZHAO Zhiping(The 20th Research Institute of CETC,Xi’an 710071,China)

机构地区：[1]中国电子科技集团公司第二十研究所,陕西西安710068

出　　处：《电子工艺技术》2020年第3期156-158,共3页Electronics Process Technology

摘　　要：利用楔形键合设备进行金丝在镀镍钯金Ro5880基板上的键合实验。采用正交实验法分析了镀层厚度、键合功率、键合时间、键合温度等工艺参数对楔形键合的影响。同时,在镀镍金Ro5880板上进行了对比试验。研究发现:与镀镍金基板相比,镀镍钯金基板在可焊性、键合强度、成本方面均有着巨大的优势,在电子组装、封装领域有着广阔的应用前景。Using wedge bonding equipment,gold wire bonding experiments are carried out on NiPdAu coating Ro5880 substrate.Based on orthogonal experiment design method,the effects of coating thickness,ultrasonic power,ultrasonic time and bolding temperature on wedge bonding are analyzed.The results indicate that compared with NiAu coating substrates,NiPdAu coating substrates have great advantages in weldability,bonding strength and cost,and have broad application prospects in the field of electronic assembly and packaging.

关 键 词：金丝键合 楔形键合 微波多芯片组件 NiPdAu镀层 键合强度 正交试验 

分 类 号：TN405[电子电信—微电子学与固体电子学]