退火对EBE,IBS和ALD沉积HfO2薄膜的抗激光损伤性能影响  

Impact of annealing on laser resistance of HfO2 films fabricated by ALD,IBS and EBE techniques

作　　者：刘浩 马平[2] 蒲云体 赵祖珍[1] Liu Hao;Ma Ping;Pu Yunti;Zhao Zuzhen(Research Institute of Tsinghua University in Shenzhen,Shenzhen 518057,China;Research Center of Laser Fusion,CAEP,P.O.Box 919-988,Mianyang 621900,China)

机构地区：[1]深圳清华大学研究院,广东深圳518057 [2]中国工程物理研究院激光聚变研究中心,四川绵阳621900

出　　处：《强激光与粒子束》2020年第7期7-14,共8页High Power Laser and Particle Beams

基　　金：深圳市科技计划基础研究面上项目(JCYJ20190807142405649)。

摘　　要：结合自身实验条件采用电子束蒸发(EBE)、离子束溅射(IBS)和原子层沉积(ALD)三种工艺制备了HfO2薄膜,对其进行退火实验,采用1064 nm Nd:YAG激光测定了即时沉积和退火后各HfO2薄膜的抗激光损伤能力。研究发现,ALD HfO2薄膜的激光损伤阈值最高,EBE HfO2薄膜次之,IBS HfO2薄膜的损伤阈值最低;300℃退火对各工艺薄膜抗激光损伤能力的影响均为负面,500℃退火则会显著降低ALD HfO2薄膜的抗激光损伤能力。Annealing is one of the most accessible post-treatment techniques in high power laser coatings,however,the impact of annealing on laser resistance of the coatings is not clear until today.In this experiment,HfO2 films have been prepared by EBE,IBS and ALD techniques,respectively.The laser resistance of each film before and after annealing has been tested with the 1064 nm Nd:YAG laser according to ISO 21254.It is found that the ALD HfO2 film has the highest LIDT,while the IBS HfO2 film has the lowest.It is also found that the laser resistance of all the samples does not benefit from the 300℃annealing,moreover,the laser resistance of the ALD HfO2 film decreases tremendously after annealing at 500℃.The experimental results are discussed and analyzed.

关 键 词：HFO2薄膜 激光损伤阈值 电子束蒸发 离子束溅射 原子层沉积 

分 类 号：O439[机械工程—光学工程]