AlN薄膜制备与表征研究型实验设计  

Design of Research-oriented Experiment for Preparation and Characterization of AlN Film

作　　者：陶鹏程 梁红伟[2] 夏晓川[2] 黄火林 TAO Pengcheng;LIANG Hongwei;XIA Xiaochuan;HUANG Huolin(School of Optoelectronic Engineering and Instrumentation Science,Dalian University of Technology,Dalian 116024,China;School of Microelectronics,Dalian University of Technology,Dalian 116024,China)

机构地区：[1]大连理工大学光电工程与仪器科学学院,大连116024 [2]大连理工大学微电子学院,大连116024

出　　处：《实验科学与技术》2020年第3期118-122,共5页Experiment Science and Technology

基　　金：大连理工大学教学改革基金(YB2018024,YB2019017)。

摘　　要：将科研成果转化为研究型本科实验教学内容,设计了不同极性AlN薄膜的制备及表征综合实验。采用金属有机化学气相沉积方法制备混合极性、N极性和Al极性的AlN薄膜,研究了不同极性对AlN薄膜表面形貌和晶体质量的影响。研究结果表明,将渐变组分AlGaN极性调控层引入到GaN和AlN外延膜之间,AlN薄膜转变为单一Al极性生长,高分辩X射线衍射摇摆曲线(002)和(102)的半峰宽分别为375 arcsce和420 arcsce。该实验激发了学生对科学研究的兴趣,深入学习薄膜材料的制备及表征方法,培养了学生积极探索的创新实践能力。By transforming scientific research results into research-based undergraduate experimental teaching content, comprehensive experiments for the preparation and characterization of AlN films with different polarities were designed. The mix-polarity, Npolarity and Al-polarity AlN thin films are prepared by metal-organic chemical vapor deposition, and its surface morphology and crystalline quality are studied. The results show that when the graded AlGaN polarity control layer is introduced between the GaN and AlN epitaxial films, the AlN film is transformed into a single Al polar growth, and the half-peak widths of the high resolution X-ray diffraction rocking curves(002) and(102) are 375 arcsce and 420 arcsce respectively. This experiment stimulated the students’ interest in scientific research, in-depth study of the preparation and characterization methods of thin film materials, and cultivated students’ innovative and practical ability to actively explore.

关 键 词：氮化铝薄膜 研究型实验 实验教学 宽带隙半导体 

分 类 号：TM23[一般工业技术—材料科学与工程]