13~15.5 GHz GaN 20 W高效率功率放大器芯片  

13~15.5 GHz GaN 20 W Power Amplifier MMIC

作　　者：金辉 陶洪琪[1] 余旭明[1] JIN Hui;TAO Hong-qi;YU Xu-ming(Science and Technology on Monolithic Integrated Circuits and Modules Laboratory,Nanjing Electronic Devices Institute,Nanjing 210016,China)

机构地区：[1]南京电子器件研究所微波毫米波单片集成和模块电路重点实验室,江苏南京210016

出　　处：《通信电源技术》2020年第9期45-48,共4页Telecom Power Technology

摘　　要：设计了一款采用0.20μm GaN HEMT工艺研制的13~15.5 GHz功率放大器芯片。基于loadpull测试获得GaN HEMT管芯的最佳输出功率和最佳效率阻抗。此外,设计了一种宽带低损耗输出匹配电路,提高了功放芯片的功率及附加效率,并将输出匹配电路中的单电容改为双电容串联的形式,降低了电容极板的电场强度,提高了芯片的可靠性。该芯片在13~15.5 GHz频率范围内,漏压28 V(100μs脉宽,10%占空比)条件下,线性增益大于30 dB,功率增益大于24 dB,典型饱和输出功率为20 W,附加效率>42%,最高效率达到47%;漏压连续波条件下,典型饱和输出功率达到16 W,附加效率>31%,最高效率达到35%;芯片面积为3 mm×3 mm。A 13~15.5 GHz GaN 20W Power Amplifier MMIC was presented,which was fabricated by 0.20μm GaN HEMT technology.By using loadpull system,the optimum power impedance and optimum efficiency impedance were obtained.A wide band low insert loss output match circuit was designed and high power and PAE were achieved.The capacitors of the output match circuit were designed by a series format of two capacitors.Lower electric field intensity of the capacitor’s plate and reliability of the chip had achieved.Under the condition of drain bias 28 V(100μs pulse-width and 10%duty-cycle),the MMIC demonstrated a linear gain over 30dB,power gain over 24 dB,typical saturated output power of 20W and power added efficiency greater than 42%across the 13~15.5 GHz range and the highest efficiency reached 47%.Under the CW condition,the typical output power reached 16W,PAE>31%,and the highest PAE reached 35%.The MMIC size is 3 mm×3 mm.

关 键 词：GAN KU波段 功率放大器 高效率 

分 类 号：TN722.75[电子电信—电路与系统] TN40