平面栅SiC MOSFET设计研究  

Investigation on Design of SiC Planar Gate MOSFET

作　　者：韩忠霖 白云[1] 陈宏[1] 杨成樾[1] HAN Zhonglin;BAI Yun;CHEN Hong;YANG Chengyue(Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China;School of Microelectronics,University of Chinese Academy of Sciences,Beijing 100049,China)

机构地区：[1]中国科学院微电子研究所,北京100029 [2]中国科学院大学微电子学院,北京100049

出　　处：《电源学报》2020年第4期4-9,共6页Journal of Power Supply

基　　金：国家重点研发计划资助项目(2017YFB1200902)。

摘　　要：碳化硅MOSFETs开关速率快,耐压高,在逆变器应用领域前景广阔。平面栅MOSFETs因其成熟的工艺是最先被商业化的器件。在平面栅MOSFETs的设计中,降低导通电阻和提高芯片的电流密度是重要的开发目标。基于自主研制的1200 V及1700 V SiC MOSFETs,研究了载流子扩展层技术、JFET注入技术以及元胞结构对器件电学特性的影响。测试结果表明采用方形元胞设计的SiC MOSFET的电流明显大于采用条形元胞设计的电流,JFET注入对阈值电压的影响比载流子扩展层技术更小。Silicon carbide(SiC)metal-oxide-semiconductor field effect transistors(MOSFETs),which have a fast switching speed and a high voltage capability,show a broad prospect in the field of inverter applications.Especially,planar gate MOSFETs are the first commercialized devices owing to the corresponding mature technology.In their design,reducing the on-resistance and increasing the current density of chips are important development targets.In this paper,based on self-developed 1200 V and 1700 V SiC MOSFETs,the influences of the carrier spreading layer,JFET implantation and different cell structures on the devices’electric characteristics are studied.Test results show that the current in the SiC MOSEFT with the design of square cell was significantly larger than that with the design of linear cell,and JFET implantation had less influence on threshold voltage compared with the carrier spreading layer.

关 键 词：碳化硅 平面栅MOSFET 导通电阻 载流子扩展层 JFET注入 

分 类 号：TM56[电气工程—电器]