一种42~46 GHz高效率功率放大器设计  

A 42~46 GHz High Efficiency Power Amplifier

作　　者：杜鹏搏[1] 默立冬[1] 苏国东[2] 蔡树军[1] DU Pengbo;MO Lidong;SU Guodong;CAI Shujun(The 13th Research Institute of China Electronics Technology Group Corporation,Shijiazhuang Hebei 050051,China;Key Laboratory of RF Circuits and Systems,Ministry of Education,Hangzhou Dianzi University,Hangzhou Zhejiang 310018,China)

机构地区：[1]中国电子科技集团公司第十三研究所,河北石家庄050051 [2]杭州电子科技大学射频电路与系统教育部重点实验室,浙江杭州310018

出　　处：《杭州电子科技大学学报（自然科学版）》2020年第4期25-30,共6页Journal of Hangzhou Dianzi University：Natural Sciences

摘　　要：基于GaN HEMT工艺,对HEMT器件大信号模型进行研究,并设计了一款工作频率范围为42~46 GHz的功率放大器芯片。电路采用三级级联放大,使用Wilkinson网络结构进行功率分配/合成,各级选取合适的栅宽以满足功率、效率和增益等指标。芯片尺寸为2.70 mm×2.90 mm。芯片测试结果表明,在42~46 GHz内,饱和输出功率大于41 dBm,功率增益大于18 dB,功率附加效率大于30%。In this paper, a 42~46 GHz power amplifier(PA) is designed by using a user-defined HEMT model of the GaN process. This PA adopts 3-stage cascade amplifier in series and employs the Wilkinson power divider and combiner to fulfill the matching networks, the signal distribution and combination. The measurement results show that the saturated output power is larger than 41 dBm while its operating frequency is within 42 GHz ~ 46 GHz, the power gain is larger than 18 dB over the whole working frequency band, and the power-added efficiency is larger than 30%. This PA occupies an area of 2.70 mm×2.90 mm.

关 键 词：GaN HEMT 大信号模型 功率放大器 饱和输出功率 功率附加效率 

分 类 号：TN402[电子电信—微电子学与固体电子学]