硅片化学机械抛光技术的研究进展  

Review on chemical mechanical polishing of silicon wafers

作　　者：徐嘉慧 康仁科[1] 董志刚[1] 王紫光 XU Jiahui;KANG Renke;DONG Zhigang;WANG Ziguang(Key Laboratory for Precision and Non-traditional Machining Technology of Ministry of Education, Dalian University of Technology, Dalian 116024, Liaoning, China;School of Mechanical Engineering, Dalian Jiaotong University, Dalian 116028, Liaoning, China)

机构地区：[1]大连理工大学,精密与特种加工教育部重点实验室,辽宁大连116024 [2]大连交通大学机械工程学院,辽宁大连116028

出　　处：《金刚石与磨料磨具工程》2020年第4期24-33,共10页Diamond & Abrasives Engineering

基　　金：国家自然科学基金面上项目(51975095);装备预研教育部联合基金(6141A02022128);国家重点研发计划课题(2016YFB1102205)。

摘　　要：随着硅片厚度的增大和芯片厚度的减小,硅片在加工中的材料去除量增大,如何提高其加工效率就成了研究的热点之一。由于化学机械抛光过程复杂,抛光后硅片的质量受到多种因素的影响,主要包括抛光设备的技术参数、耗材(抛光垫和抛光液)的性质和硅片自身在抛光时的接触应力状态等。本文介绍了硅片化学机械抛光技术的研究进展,讨论了影响硅片抛光后表面质量和表面材料去除率的因素,如抛光液、抛光垫、抛光压力等,并对目前用于硅片化学机械抛光的先进设备进行了综述。With the increase of wafer thickness and the decrease of chip thickness,the amount of material removal increases in the process of wafer processing,and the problem of improving the processing efficiency has become one of the research hotspots.Due to the complexity of chemical mechanical polishing process,the quality of silicon wafer after polishing is affected by many factors,including the technical parameters of polishing equipment,the properties of consumables(polishing pad and polishing fluid)and the contact stress state of silicon wafer during polishing.In this paper,the research progress of chemical mechanical polishing technology for silicon wafer is introduced.The factors affecting the surface quality and material removal rate of silicon wafer,such as polishing fluid,polishing pad and polishing pressure,are discussed,and the advanced equipment used in chemical mechanical polishing of silicon wafer is reviewed.

关 键 词：硅片 化学机械抛光 抛光液 抛光垫 抛光设备 

分 类 号：TG58[金属学及工艺—金属切削加工及机床] TN405[电子电信—微电子学与固体电子学]