超高压JFET器件电参数的合理实现  

Study on UHVJFET's Structure and Parameters

作　　者：方绍明 Fang Shaoming(Sunmoon Microelectronics Co.,Ltd,Guangdong 518000,China)

机构地区：[1]深圳市明微电子股份有限公司,广东518000

出　　处：《集成电路应用》2020年第9期188-191,共4页Application of IC

摘　　要：基于高性价比的10层masks UHVBCD工艺平台,对UHVJFET电参数机理进行分析,并做出实验数据总结,可作为半导体工艺器件研发人员的参考资料。依靠Double Resurf原理实现高击穿电压BVd。Combined结构的JFET漏极击穿电压BVd取决于与其并联的UHVLDMOS,独立结构的JFET则可通过改变漂移宽度Ld,在15~80μm范围内,实现100~900V范围的JFET击穿电压。通过调整DN或DP注入剂量改变沟道掺杂浓度,同时通过沟通区域的DN局部挖空设计来实现VLD变掺杂,可以实现9~30V区间的源极夹断电压Vp。实验还得出圆形结构与直条形结构的UHVJFET,变掺杂设计规则有0.5μm左右的偏差。结果得出JFET在Vp=20V,Vs=0V,Vd=50V时,供电能力在2mA/100μm左右。This paper is based on UHVBCD process platform with only 10 mask layers.After theory discribtion on UHVJFET,experiment data are summaried,which can be used for R&D engineers as reference.BVd is performed by double Resuf technology.It's dependent on UHVLDMOS BVd for combined UHVJFET and related with Ld for single UHVJFT.100~900V BVd can be performed by changing Ld in range of 15~80μm.By adjusting DN and DP impalant dose to change channel doping,along with DN located block design to get VLD doping,The range of 9~30V Vp can be got.The conclusion is also got that there is 0.5μm gap in VLD block design between circle shape and line shape UHVJFET.The Current supply Ion is 2mA per 100μm what Vp=20V,Vs=0V,Vd=50V.

关 键 词：电子器件 超高压JFET BCD工艺 击穿电压 夹断电压 

分 类 号：TN386[电子电信—物理电子学] TN433