低压MOSFET集成ESD保护结构的设计方法  

Design of Integrated ESD Protection Structure for Low Voltage MOSFET

作　　者：方绍明 赵美英 FANG Shaoming;ZHAO Meiying(Shenzhen Ming Microelectronics Co.,Ltd,Guangdong 518000,China;Shenzhen founder Microelectronics Co.,Ltd,Guangdong 518000,China)

机构地区：[1]深圳市明微电子股份有限公司,广东518000 [2]深圳方正微电子有限公司,广东518000

出　　处：《集成电路应用》2020年第9期192-194,共3页Application of IC

摘　　要：为了有效防止低压MOSFET在受到静电击穿而损坏产品,需要设计专门的静电保护二极管,并联在MOSFET的栅极和源极之间,以对栅氧化层进行保护。静电保护结构的设计规则尺寸、注入剂量和级联结构,都会影响保护效果。设计者需在弄清ESD保护工作机理后、根据产品静电等级需要,确定保护二极管的特性参数,并结合工艺可行性及成本等因素,设计出最合适的ESD保护结构。In order to effectively prevent the low voltage MOSFET from being damaged by electrostatic breakdown,it is necessary to design a special electrostatic protection diode,which is connected in parallel between the gate electrode and the source electrode of the MOSFET to protect the gate oxide layer.The design rules,size,injection dose and cascade structure of electrostatic protection structure will affect the protection effect.The designer should make clear the working mechanism of ESD protection,determine the characteristic parameters of protection diode according to the requirement of product electrostatic grade,and design the most suitable ESD protection structure combined with process feasibility and cost.

关 键 词：集成电路制造 MOSFET 保护二极管 静电 人体模式 多晶硅 注入 栅源 

分 类 号：TN405[电子电信—微电子学与固体电子学] TN432