一种高结终端效率1700V/10A SiC功率MOSFET  

1 700 V/10 A SiC Power MOSFET with High Junction Terminal Efficiency

作　　者：刘岳巍 杨瑞霞 张志国 王永维[4] 邓小川[5] Liu Yuewei;Yang Ruixia;Zhang Zhiguo;Wang Yongwei;Deng Xiaochuan(School of Electronic and Information Engineering,Hebei University of Technology,Tianjin 300130,China;School of Electrical and Electronic Engineering,Shijiazhuang Tiedao University,Shijiazhuang 050043,China;Beijing Advanced Semiconductor Innovation Co.,Ltd.,Beijing 100300,China;The 13th Research Institution,CETC,Shijiazhuang 050051,China;School of Electronic Science and Engineering,University of Electronic Science and Technology of China,Chengdu 610054,China)

机构地区：[1]河北工业大学电子信息工程学院,天津300130 [2]石家庄铁道大学电气与电子工程学院,石家庄050043 [3]北京国联万众半导体科技有限公司,北京100300 [4]中国电子科技集团公司第十三研究所,石家庄050051 [5]电子科技大学电子科学与工程学院,成都610054

出　　处：《半导体技术》2020年第9期685-689,695,共6页Semiconductor Technology

基　　金：国家自然科学基金资助项目(61774054)。

摘　　要：设计了一种具有分组缓变间距场限环(MGM-FLR)结终端结构的SiC功率MOSFET,并基于国内现有的SiC电力电子器件工艺平台进行了流片,完成了1700 V/10 A SiC功率MOSFET样品的制备。测试结果表明,MGM-FLR结构有效调制并优化了结终端区域的表面电场强度分布,SiC MOSFET漏电流为1μA时最大击穿电压达到2400 V,为理想平行平面结击穿电压的91%。器件的比导通电阻约为36 mΩ·cm^2,阈值电压为2.9 V。对制备的SiC功率MOSFET进行了150℃、168 h的高温反偏(HTRB)可靠性测试评估,实验前后的击穿电压变化量不超过100 V,初步验证了MGM-FLR结终端结构的鲁棒性和可行性。A 1700 V/10 A SiC power MOSFET with multiple-zone gradient modulation field limiting ring(MGM-FLR)junction terminal structure was designed and fabricated based on the present domestic SiC power electronics device process platform.The test results show that the structure of MGM-FLR effectively modulates and optimizes the distribution of the surface electric field strength in the junction terminal region,the maximum breakdown voltage of SiC MOSFET reaches 2400 V at the leakage current of 1μA,which is 91%of the breakdown voltage of the ideal parallel plane junction.The specific on-resistance of the device is about 36 mΩ·cm^2,and the threshold voltage is 2.9 V.The reliability test of high temperature reverse bias(HTRB)was carried out for the fabricated SiC power MOSFETs at 150℃for 168 h,the variation of breakdown voltage is less than 100 V before and after the test,which preliminarily verified the robustness and feasibility of the junction terminal structure of MGM-FLR.

关 键 词：SiC MOSFET 场限环 击穿电压 阈值电压 高温反偏(HTRB) 

分 类 号：TN386.1[电子电信—物理电子学] TN304.24