碳化硅高温压力传感器设计及工艺研究  

Study on Design and Process of Silicon Carbide High Temperature Pressure Sensor

作　　者：肖淼 任向阳 李振波[2] 张治国[2] 李新[1] XIAO Miao;REN Xiangyang;LI Zhenbo;ZHANG Zhiguo;LI Xin(School of Information Science and Engineering,Shenyang University of Technology,Shenyang 110870,China;Shenyang Academy of Instrument Science,Shenyang 110043,China)

机构地区：[1]沈阳工业大学信息科学与工程学院,沈阳110870 [2]沈阳仪表科学研究院,沈阳110043

出　　处：《微处理机》2020年第5期1-5,共5页Microprocessors

摘　　要：碳化硅因其优越的半导体性质和物理性质,在传感器领域具有广阔的应用前景。采用第三代半导体碳化硅材料制备的高温压力传感器可在高温的恶劣环境下表现出极佳的稳定性,实现对压力的准确测量,相关研究工作备受业界关注。针对当前碳化硅传感器研制尚处在初级阶段的现实,介绍几种不同类型的碳化硅压力传感器,并对传感器的设计与制作工艺进行比较分析。基于对碳化硅压力传感器国内外研究现状的简述,分析了当下主流的封装结构,兼对设计、制作所面临的问题进行深入探讨。Silicon carbide has broad application prospects in the field of sensors because of its superior semiconductor and physical properties.The high-temperature pressure sensor made of the third generation semiconductor silicon carbide material can show excellent stability in the harsh environment of high temperature and realize accurate pressure measurement,and related research has attracted much attention from the business circles.In view of the fact that the development of silicon carbide sensor is still in the initial stage,several different types of silicon carbide pressure sensors are introduced,and the design and manufacturing process of the sensors are compared and analyzed.Based on the brief introduction of the research status of silicon carbide pressure sensor at home and abroad,the current mainstream packaging structure is analyzed,and the problems in design and manufacture are discussed in depth.

关 键 词：碳化硅 高温压力传感器 压阻效应 

分 类 号：TP212.1[自动化与计算机技术—检测技术与自动化装置]