碳化硅肖特基器件的氧化退火技术研究  

Study on Oxidation Annealing Technology of Silicon Carbide Schottky Devices

作　　者：崔严匀 袁敏杰 王训辉 CUI Yanyun;YUAN Minjie;WANG Xunhui(CSMC Technologies Fab5 Co.,Ltd.,Wuxi 214061,China)

机构地区：[1]无锡华润上华科技有限公司,无锡214061

出　　处：《微处理机》2020年第5期14-16,共3页Microprocessors

摘　　要：为顺应碳化硅肖特基器件制造工艺日益成熟的趋势,对作为关键工艺的氧化退火技术展开研究,优化SiC/SiO2的界面电学参数从而提升整个器件的性能。基于理论分析,探索表面晶向与掺杂浓度、氧化速率等参数的影响。通过在不同工艺条件下进行工艺实验,确立干-湿-干氧化条件及工艺,形成优化方案,确保得到优质氧化层。经实际检验,该方案可有效调控氧化速率,从而得到均匀、致密的氧化层以及优异的界面态密度,提升了碳化硅肖特基器件的成品率和可靠性,对碳化硅肖特基二极管的加工制备技术有重要的参考意义。In order to comply with the increasingly mature manufacturing process of silicon carbide Schottky devices,the oxidation annealing technology,which is a key process,is studied to optimize the interface electrical parameters of SiC/SiO2 and improve the performance of the whole device.Based on theoretical analysis,the influence of surface crystal orientation on doping concentration,oxidation rate and other parameters was explored.Through process experiments under different process conditions,the oxidation conditions and processes of dry-wet-dry oxygen are determined,and an optimized scheme is formed to ensure that a high-quality oxide layer is obtained.The actual test shows that the scheme can effectively control the oxidation rate,so as to obtain a uniform and dense oxide layer and excellent interface state density,which improves the yield and reliability of silicon carbide Schottky devices,and has important reference significance for the processing and preparation technology of silicon carbide Schottky diodes.

关 键 词：碳化硅 氧化退火 肖特基 半导体器件 

分 类 号：TN305.5[电子电信—物理电子学]