5 V双向TVS器件击穿电压对称性分析与优化设计  

Symmetrical Breakdown Voltage Analysis and Optimization of 5 V TVS Device

作　　者：陈正才 黄龙 彭时秋 CHEN Zhengcai;HUANG Long;PENG Shiqiu(Wuxi Zhongwei Microchips Co.,Ltd.,Wuxi 214035,China)

机构地区：[1]无锡中微晶园电子有限公司,江苏无锡214035

出　　处：《电子与封装》2020年第10期66-68,共3页Electronics & Packaging

摘　　要：通过设计5 V双向TVS产品,分析了N+注入及退火工艺对器件正、反向击穿电压的影响。通过优化材料电阻率,正、反向击穿电压的差值从1.3 V优化至0.1 V,各项动态参数均满足产品要求。完成了5 V双向TVS器件击穿电压对称性的优化,各项参数均满足产品要求。The 5 V bidirectional TVS device was designed,and the effect of N+implantation and annealing process on forward and reverse voltages was analyzed.By optimizing the resistivity,the bias of forward and reverse breakdown voltages was decreased from 1.3 V to 0.1 V,and all dynamic parameters meet product requirements.As a result,the symmetry of breakdown voltage of 5 V bidirectional TVS device was optimized.

关 键 词：击穿电压 离子注入 退火 

分 类 号：TN305[电子电信—物理电子学]