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作 者:周帅[1] 翁章钊 王斌[1] 罗仲涛 ZHOU Shuai;WENG Zhangzhao;WANG Bin;LUO Zhongtao(The Fifth Electronics Research Institute of the Ministry of Industry and Information Technology,Guangzhou Guangdong 510610,China;Zhuhai Obit Electronics Co.,Ltd.,Zhuhai Guangdong 519080,China)
机构地区:[1]工业和信息化部电子第五研究所,广东广州510610 [2]珠海欧比特电子有限公司,广东珠海519080
出 处:《太赫兹科学与电子信息学报》2020年第5期939-945,共7页Journal of Terahertz Science and Electronic Information Technology
摘 要:新型封装堆叠(PoP)封装存储器的结构与常规封装不同,导致现行破坏性物理分析方法不完全适用于新型PoP存储器。对新型PoP存储器结构分析,找出了影响新型PoP封装存储器可靠性的典型缺陷。以某型号PoP封装存储器为例,运用3D-X-ray、金相切片、叠层芯片分离、非顶层芯片内部检查等关键技术,提出了一套适用性强、效率高的综合性破坏性物理分析方案,并通过实例验证了新型PoP封装存储器可靠性评估方法的有效性,同时也为后续标准的修订及其他先进封装器件的破坏性物理分析提供依据和帮助。The new Package on Package(PoP)structure of memory is different from the conventional packages,resulting in current Destructive Physical Analysis(DPA)methods not fully applicable to the new PoP memory.In this paper,the structure and typical defects affecting the reliability of a new PoP package memory are analyzed by using 3D-X-ray,metallographic slices,stacked chip separation and internal inspection of non-top chip.A comprehensive DPA scheme with strong applicability and high efficiency is proposed,and the effectiveness of evaluating the reliability of the new PoP package memory is verified through an example.It can also provide the basis and help to the revision of subsequent standards and DPA of other advanced package devices.
分 类 号:TN606[电子电信—电路与系统]
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