MOCVD法制备β-Ga2O3一维纳米材料  

Preparation of one-dimensionalβ-Ga2O3 nanomaterials by MOCVD

作　　者：朱江 胡大强 王颖 郇维亮[1] ZHU Jiang;HU Daqiang;WANG Ying;HUAN Weiliang(School of Science,University of Science and Technology Liaoning,Anshan 114051,China)

机构地区：[1]辽宁科技大学理学院,辽宁鞍山114051

出　　处：《辽宁科技大学学报》2020年第4期272-276,320,共6页Journal of University of Science and Technology Liaoning

基　　金：辽宁省自然科学基金(2019-ZD-0268);辽宁科技大学优秀人才项目(2019RC08)。

摘　　要：采用金属有机化学气相沉积法,以Au为催化剂,在蓝宝石衬底上制备β-Ga2O3一维纳米材料。采用X射线衍射仪、扫描电子显微镜、拉曼光谱仪、光致发光光谱仪对样品的物相、表面形貌、结构以及发光性能等进行了表征。主要研究了生长温度对其各种性能的影响。结果表明,600℃时,样品呈非晶态的小颗粒;650℃时为非晶态的纳米线;700℃时为结晶态的纳米柱;750℃时为结晶态的大颗粒。随着生长温度升高,样品在357 nm和408 nm处出现发光峰,且其发光强度随温度升高而增强。One dimensionalβ-Ga2O3 nanomaterials were prepared on sapphire substrates by metal-organic chemical vapor deposition with Au as catalyst.The phase,surface morphology,structure,and luminescence properties of the nanomaterials were characterized by X-ray diffraction,scanning electron microscopy,Raman spectroscopy,and photoluminescence spectroscopy.The effects of growth temperature on the properties were studied.The results show that the samples consist of small amorphous particles at 600℃,amorphous nanowires at 650℃,crystalline nanocolumns at 700℃,and large crystalline particles at 750℃.With the increase in the growth temperature,luminescence peaks appear at 357 nm and 408 nm,and the luminescence intensity increases with the increase in temperature.

关 键 词：金属有机化学气相沉积 一维纳米材料 β-Ga2O3 生长温度 

分 类 号：O472[理学—半导体物理]