InAs/GaSbⅡ类超晶格长波红外探测器背面减薄技术研究  

Study on Back Thinning Technologies of Long-wave InAs/GaSb Type-ⅡSuperlattice Infrared Detectors

作　　者：程雨 鲍英豪 肖钰[1] 李春领[1] 亢喆[1] 刘铭[1] CHENG Yu;BAO Ying-hao;XIAO Yu;LI Chun-ling;KANG Zhe;LIU Ming(North China Research Institute of Electro-Optics, Beijing 100015, China)

机构地区：[1]华北光电技术研究所,北京100015

出　　处：《红外》2020年第8期15-20,共6页Infrared

摘　　要：在长波红外波段,InAs/GaSbⅡ类超晶格材料具有比碲镉汞材料更优越的性能,因此得到了广泛研究。对InAs/GaSbⅡ类超晶格红外探测器芯片的背面减薄技术开展了一系列试验。针对<100>GaSb单晶片进行了单点金刚石机床精密加工、机械化学抛光和化学抛光方法研究,并去除了加工损伤。InAs/GaSbⅡ类超晶格红外器件的流片结果表明,长波探测器组件获得了较好的红外成像图片,提高了InAs/GaSbⅡ类超晶格长波红外探测器芯片的研制水平。In long-wave infrared region,InAs/GaSb type-Ⅱsuperlattice material has more superior performance than HgCdTe,thus has been widely studied.A series of experiments were carried out on the InAs/GaSb type-Ⅱsuperlattice infrared detector to improve the technology level of back thinning.For<100>GaSb single wafers,different single-point diamond turning(SPDT),mechanical chemical polishing and chemical polishing methods were studied.The machining damage was removed.Through the experiments of InAs/GaSb type-Ⅱsuperlattice infrared devices,good infrared imaging pictures were obtained by the long-wave detector assembly,which can improve the technology level of InAs/GaSb type-Ⅱsuperlattice long-wave infrared detector.

关 键 词：INAS/GASB 单点金刚石机床切削 表面形貌 机械化学抛光 长波红外探测器 

分 类 号：TN362[电子电信—物理电子学]