FinFET器件在极低温下特性研究  

Characterization of Bulk FinFET Devices Under Cryogenic Temperatures

作　　者：吴钰鑫 刘军[1] 汪国芳 罗琳 WU Yuxin;LIU Jun;WANG Guofang;LUO Lin(Key Laboratory for RF Circuits and Systems,Ministry of Education,Hangzhou Dianzi University,Hangzhou Zhejiang 310018,China)

机构地区：[1]杭州电子科技大学射频电路与系统教育部重点实验室,浙江杭州310018

出　　处：《杭州电子科技大学学报（自然科学版）》2020年第5期13-17,58,共6页Journal of Hangzhou Dianzi University：Natural Sciences

摘　　要：研究FinFET器件在极低温下DC和RF特性。在低温测试台中,5组不同温度(77 K,120 K,200 K,250 K,300 K)下,将4对体硅FinFET器件进行在片测试。对测试得到的射频参数进行open-short去嵌处理,对处理后的数据进行对比分析。和器件工作在室温(300 K)相比,器件工作在77 K下,阈值电压升高了近75 mV,亚阈值斜率降低了50%,截止频率和最大振荡频率都提升了20%。The Direct Current and Radio Frequency characteristics of FinFET devices at cryogenic temperatures were studied.In a cryogenic temperature testing platform,four pairs of bulk silicon FinFETs were measured on the chip at five different temperatures(77 K,120 K,200 K,250 K,and 300 K).Perform open-short de-embedding on the radio frequency parameters obtained from the test,compare and analyze the processed data.Compared with the device operating at room temperature(300 K),the device operates at 77 K,the threshold voltage has increased by nearly 75 mV,the sub-threshold slope has been reduced by 50%,and the cut-off frequency and maximum oscillation frequency have been increased by 20%.

关 键 词：FINFET 极低温 直流特性 射频特性 

分 类 号：TN386[电子电信—物理电子学]