0.25μm栅长GaAs pHEMT栅极高温及关态应力退化机理  

Gate Degradation Mechanism of 0.25μm GaAs pHEMT Under High Temperature and Off-State Stress

作　　者：麻仕豪 化宁 张亮 王茂森 王佳[2] MA Shihao;HUA Ning;ZHANG Liang;WANG Maosen;WANG Jia(Shanghai Institute of Aerospace Electronics Technology,Shanghai 201109,P.R.China;Shanghai Academy of Spaceflight Technology,Shanghai 201109,P.R.China)

机构地区：[1]上海航天电子技术研究所,上海201109 [2]上海航天技术研究院,上海201109

出　　处：《微电子学》2020年第5期761-765,共5页Microelectronics

摘　　要：GaAs赝配高电子迁移率晶体管(pHEMT)的关态栅极漏电流取决于温度与电应力环境。研究了高温与电应力对0.25μm GaAs pHEMT肖特基特性的影响。该pHEMT的反向偏置栅极漏电流主要受陷阱辅助发射机制和隧穿电流机制的影响。建立模型,对不同温度下栅极漏电流曲线进行拟合,结果表明,栅极漏电流在常温下由隧穿电流机制主导,在高温下由陷阱辅助发射机制主导。在高温关态应力下对栅极漏电流随应力时间变化的过程进行表征,从时间层面再次验证了两种机制在不同温度下发生转变的过程。The off-state gate leakage current of GaAs pseudocrystal high electron mobility transistor(pHEMT)depends on the temperature and electrical stress environment.The effects of high temperature and electrical stress on the Schottky properties of 0.25μm GaAs pHEMT were investigated.The reverse bias gate drain current of the pHEMT was mainly affected by trap assisted emission mechanism and tunneling current mechanism.The model was built to fit the gate leakage current curve at different temperatures.The results showed that the gate leakage current was dominated by the tunneling current mechanism at normal temperature and the trap assisted emission mechanism at high temperature.Furthermore,the gate leakage process with the change of stress time was characterized under the high temperature stress,and the transition process of two mechanisms at different temperatures was verified again according to the response time.

关 键 词：砷化镓 赝配高电子迁移率晶体管 栅极漏电流 漏电机制 

分 类 号：TN386[电子电信—物理电子学]