包含Kink效应的改进型GaN HEMTs模型  

An Improved Model for GaN HEMTs with Kink Effect

作　　者：侯彦飞 刘祎静 李灏 何伟 吕元杰[2] 刘军 杨宋源 王伯武 于伟华 HOU Yan-fei;LIU Yi-jing;LI Hao;HE Wei;LÜYuan-jie;LIU Jun;YANG Song-yuan;WANG Bo-wu;YU Wei-hua(Laboratory of Millimeter-Wave and Terahertz Technology, Beijing Institute of Technology, Beijing 100081,China;National Key Laboratory of Application Specific Integrated Circuit, HebeiSemiconductor Research Institute, Shijiazhuang,Hebei 050051, China)

机构地区：[1]北京理工大学毫米波与太赫兹技术北京市重点实验室,北京100081 [2]河北半导体研究所专用集成电路国家重点实验室,河北石家庄050051

出　　处：《北京理工大学学报》2020年第11期1253-1258,共6页Transactions of Beijing Institute of Technology

基　　金：国家自然科学基金资助项目(61771057)。

摘　　要：提出了一种GaN高电子迁移率晶体管(HEMTs)建模方法.该模型以ADS(advanced design system)中的符号定义器件SDD(symbolically defined device)为基础,结合宽带S-参数与脉冲直流测试数据,对GaN器件进行精确建模.本文所用晶体管为双指AlGaN/GaN HEMT器件,其栅长为90 nm,单指栅宽为40μm.数据测试采用在片测试方法,在常规S参数测试和直流测试基础上,增加了脉冲直流测试,并针对测试数据体现的Kink效应和阈值电压漂移现象进行建模.研究结果表明,该模型可以准确拟合器件0~110 GHz S参数及直流特性,谐波平衡仿真显示该模型具有良好的收敛特性,可用于GaN HEMTs器件电路仿真.An improved model for AlGaN/GaN HEMTs including Kink effect was presented in this paper.This large signal model was constructed based on the symbolically defined device(SDD)form of advanced design system(ADS).The improved I-V expression was proposed to complete nonlinear fitting accurately by contrasting the measure results of the on-wafer AlGaN/GaN HEMT with two gate fingers each being 90 nm long and 40μm wide.The model can accurately fit the 0~110 GHz S-parameter and DC characteristics of the device.The convergence of the model is great during the harmonic balance simulation.So this modeling method can be applied to millimeter-wave GaN HEMTs.

关 键 词：ALGAN/GAN 高电子迁移率晶体管(HEMT) 大信号模型 KINK效应 

分 类 号：TP432[自动化与计算机技术]