4in硅基碲化镉的厚度均匀性研究  

Study on Thickness Uniformity of 4-in Silicon-based Cadmium Telluride

作　　者：李震[1] 高达[1] 师景霞 王丛[1] LI Zhen;GAO Da;SHI Jing-xia;WANG Cong(North China Research Institute of Electro-Optics, Beijing 100015, China)

机构地区：[1]华北光电技术研究所,北京100015

出　　处：《红外》2020年第11期22-26,32,共6页Infrared

摘　　要：采用分子束外延(Molecular Beam Epitaxy,MBE)方法在4 in硅衬底上进行了硅基碲化镉复合衬底生长工艺研究。使用光学轮廓仪、原子力显微镜、傅里叶红外光谱仪等设备对碲化镉薄膜进行了测试。结果表明,碲化镉薄膜的厚度均匀性、表面粗糙度、翘曲度和半峰宽等都达到了预期标准,能为外延碲镉汞薄膜提供良好的衬底。Molecular beam epitaxy was used to study the growth of CdTe/Si composite substrates on a 4-inch silicon substrate.Optical profilometer,atomic force microscope,Fourier infrared spectrometer and other equipment were used to test the cadmium telluride film.The test and analysis results show that the thickness uniformity,surface roughness,warpage and half-width of the cadmium telluride film meet the expected standards,which can provide a good substrate for the epitaxial mercury cadmium telluride film.

关 键 词：碲化镉 硅基 分子束外延 

分 类 号：TN214[电子电信—物理电子学]