薄硅膜SOI器件辐射效应研究  

Study on Radiation Effect of Thin Silicon Film SOI Devices

作　　者：贺琪[1] 顾祥[1] 纪旭明 李金航 赵晓松 HE Qi;GU Xiang;JI Xuming;LI Jinhang;ZHAO Xiaosong(The 58th Research Institute of China Electronics Technology Group Corporation,Wuxi Jiangsu 214035,China)

机构地区：[1]中国电子科技集团公司第五十八研究所,江苏无锡214035

出　　处：《微处理机》2020年第6期1-4,共4页Microprocessors

摘　　要：为适应SOI技术的发展,探索相关材料参数受辐射影响程度及器件的抗辐射性能,研究了不同硅膜厚度SOI器件的总剂量辐射效应。采用^60Co作为辐射源,所选器件的辐射性能通过晶体管前栅和背栅的阈值电压漂移量进行表征。实验结果显示,所选的本单位SOI工艺的硅膜厚度必须大于205 nm才能保证器件的抗总剂量辐射能力,针对此结论利用TCAD软件进行仿真验证,归纳出相应的物理机制。对电路静态电流特性对总剂量辐射的敏感性也给出了相关的讨论与评估。For the purpose of adapting to the development of SOI technology and exploring the influence of radiation on the material parameters and the anti-radiation performance of devices,the total dose radiation effect of SOI devices with different silicon film thicknesses is studied.Using 60Co as the radiation source,the radiation performance of the selected device is characterized by the threshold voltage drift of the front gate and the back gate of the transistor.The experimental results show that the selected silicon film thickness of SOI process must be greater than 205nm to ensure the device's total dose radiation resistance.According to the conclusion,TCAD software is used for simulation verification,and the corresponding physical mechanism is summarized.The sensitivity of circuit static current characteristics to total dose radiation is also discussed and evaluated.

关 键 词：辐射 硅膜 FD SOI器件 阈值电压 静态电流 

分 类 号：TN386.1[电子电信—物理电子学] TN432