高基频高机电耦合系数晶体滤波器  

Crystal Filter with High Fundamental Frequency and High Electromechanical Coupling Coefficient

作　　者：彭胜春[1] 赵瑞星 阳皓[1] 邱泽林 李亚飞 温桎茹 唐平[1] 董姝[1] PENG Shengchun;ZHAO Ruixing;YANG Hao;QIU Zelin;LI Yafei;WEN Zhiru;TANG Ping;DONG Shu(The 26th Institute of China Electronics Technology Group Corporation,Chongqing 400060,China;The Third Military Represent office to Xi’an Dirstrict,Equipment Department PLA Rocket Force,Xi’an 710100,China)

机构地区：[1]中国电子科技集团公司第二十六研究所,重庆400060 [2]火箭军装备部驻西安地区第三军事代表室,陕西西安710100

出　　处：《压电与声光》2020年第6期761-764,共4页Piezoelectrics & Acoustooptics

摘　　要：采用离子刻蚀工艺对钽酸锂晶体材料进行刻蚀加工,得到了反台面结构晶片,其厚度约为31.3μm,可用于制作高基频晶体谐振器。应用该晶体谐振器,在电路上采用差接桥型电路,设计了一种高频宽带晶体滤波器,其中心频率为63 MHz,3 dB带宽为780 kHz,阻带衰耗大于75 dB,工作温度为-55^+95℃。结果表明,采用离子刻蚀工艺能极大地提高晶体滤波器的工作频率上限。The lithium tantalate crystal material was etched by the ion etching process,and an inverted-mesa structure wafer was obtained,the thickness of which was about 31.3μm,which can be used to fabricate high fundamental frequency crystal resonators.A high frequency broadband crystal filter with a center frequency of 63 MHz,3 dB bandwidth of 780 kHz,stopband attenuation of greater than 75 dB and the operating temperature of-55 to+95℃is designed by using the fabricated resonator and the differential bridge circuit in the circuit.The experimental results show that the upper limit of the operating frequency of the crystal filter can be greatly increased by using the ion beam etching process.

关 键 词：晶体滤波器 离子刻蚀 钽酸锂 高基频 机电耦合系数 

分 类 号：TN713[电子电信—电路与系统] TM22[一般工业技术—材料科学与工程]