60V工作P波段2500W GaN HEMT微波功率管  

60V Operating P-band 2500W GaN HEMT Microwave Power Transistor

作　　者：周书同 唐厚鹭 王琪 陈韬[1] 魏星[1] 彭大青[1] 陈堂胜[1] ZHOU Shutong;TANG Houlu;WANG Qi;CHEN Tao;WEI Xing;PENG Daqing;CHEN Tangsheng(Nanjing Electronic Devices Institute,Nanjingy 210016,CHN)

机构地区：[1]南京电子器件研究所,南京210016

出　　处：《固体电子学研究与进展》2020年第6期395-400,460,共7页Research & Progress of SSE

摘　　要：基于高击穿的GaN HEMT工艺,报道了一款高功率高效率的GaN功率管及其匹配电路的设计与实现。对功率管进行预匹配,并采用同轴巴伦线和推挽电路完成对功率管的输入输出电路匹配设计,通过4胞高效合成及热沉设计,在工作电压60 V、工作脉宽300μs、工作比10%的条件下,实现410~485 MHz全频带2500 W功率输出、附加效率76%以上的高效高功率功率管,器件在驻波比大于5∶1时仍稳定工作。Based on the GaN HEMT process with high-breakdown voltage,design and fabrication of a high power and high efficiency GaN power transistor with matching circuit were reported in this paper.The power transistor is pre-matched,and the input-output circuit matching design is achieved using the coaxial balun and push-pull circuits.By the high-efficiency synthesis with 4 cells and the thermal sinking design,the transistors show an output power more than 2500 W and a power added efficiency more than 76%in the band of 410 MHz to 485 MHz under the conditions of 60 V working voltage,300μs pulse width and 10%duty cycle.The device is stable under RF mismatch test with VSWR>5∶1.

关 键 词：GaN功率管 P波段 高功率 高效率 

分 类 号：TN386[电子电信—物理电子学]