GaN单片功率集成电路研究进展  

Development of GaN Monolithic Power Integrated Circuits

作　　者：赖静雪 陈万军[1] 孙瑞泽[1] 刘超[1] 张波[1] LAI Jingxue;CHEN Wanjun;SUN Ruize;LIU Chao;ZHANG Bo(State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China,Chengdu 610054,China)

机构地区：[1]电子科技大学电子薄膜与集成器件国家重点实验室,成都610054

出　　处：《电子与封装》2021年第2期23-34,I0002,共13页Electronics & Packaging

基　　金：国家自然科学基金(62004030)。

摘　　要：GaN高电子迁移率晶体管(HEMT)器件具有工作频率高、导通损耗小等优点,已经开始广泛应用在多种高频、高效功率转换器中,而拥有更高集成度的全GaN单片集成电路可进一步提高基于GaN HEMT器件功率变换器的性能。介绍了不同类型的全GaN集成工艺平台以及GaN功能子电路的研究进展,并对全GaN单片集成功率IC的研究现状进行了综述。GaN HEMT devices,which have excellent features such as high breakdown voltage and low on-resistance,have been widely applied in high voltage,high frequency and high efficiency power converters.Higher integration of all-GaN monolithic IC can further improve the performance of power converters based on GaN HEMT.This article introduces several all-GaN integration platforms and basic GaN functional subcircuits,then the research status of all-GaN monolithic integrated power converter are reviewed.

关 键 词：AlGaN/GaN HEMT 全氮化镓 变换器IC 单片集成 功率变换 

分 类 号：TN405[电子电信—微电子学与固体电子学]