碳化硅肖特基器件多层金属化技术研究  

Study on Multilayer Metallization Technology of Silicon Carbide Schottky Devices

作　　者：赵欢 ZHAO Huan(The 47th Institute of China Electronics Technology Group Corporation,Shenyang 110000,China)

机构地区：[1]中国电子科技集团公司第四十七研究所,沈阳110000

出　　处：《微处理机》2021年第1期31-33,共3页Microprocessors

摘　　要：碳化硅作为近年来迅速发展起来的一种宽禁带半导体材料,具有宽禁带、高击穿电场、高载流子饱和漂移速率、高热导率、高功率密度等优点,是制备大功率、高温、高频器件的理想材料。欧姆接触的实现是碳化硅器件制造工艺的关键。为保证欧姆接触的低接触电阻和高稳定性,基于对碳化硅材料金属化技术的理论分析,进行大量工艺实验,调整工艺参数,并进一步探索多层金属化电极的工艺技术,得出较为理想的工艺条件,为碳化硅材料金属化工艺及相关器件技术的进一步研究打下良好基础。As a wide band gap semiconductor material developed rapidly in recent years,SiC has the advantages of wide band gap,high breakdown electric field,high carrier saturation drift rate,high thermal conductivity and high power density,and is an ideal material for preparing high power,high temperature and high frequency devices.The realization of ohmic contact is the key to the manufacturing process of SiC devices.In order to ensure the low contact resistance and high stability of ohmic contact,based on the theoretical analysis of the metallization technology of SiC materials,a large number of process experiments are carried out,the process parameters were adjusted,and the process technology of multilayer metallized electrodes is further explored,and the ideal process conditions are obtained,which lay a good foundation for the further research of metallization technology of SiC materials and related device technologies.

关 键 词：碳化硅 二极管 金属化技术 肖特基 半导体器件 

分 类 号：TN305.96[电子电信—物理电子学]