碱性阻挡层抛光液中ULK介质抛光性能的研究  

Study on polishing performance of ULK dielectric film in alkaline polishing slurry

作　　者：阳小帆 张保国 杨朝霞 李烨 李浩然 YANG Xiaofan;ZHANG Baoguo;YANG Zhaoxia;LI Ye;LI Haoran(School of Electronic and Information Engineering,Hebei University of Technology,Tianjin 300130,China;Tianjin Key Laboratory of Electronic Materials and Devices,Hebei University of Technology,Tianjin 300130,China)

机构地区：[1]河北工业大学电子信息工程学院,天津300130 [2]天津市电子材料与器件重点实验室,天津300130

出　　处：《电镀与涂饰》2021年第2期102-108,共7页Electroplating & Finishing

基　　金：河北省高层次人才资助项目百人计划项目(E2013100006)。

摘　　要：研究了化学机械抛光(CMP)过程中抛光液的SiO_(2)磨料质量分数和表面活性剂对多孔SiOCH薄膜(ULK介质)介电常数(k)及抛光速率的影响。所用抛光液(pH=10)主要由0%~4%(质量分数,下同)SiO_(2)、0.075%H_(2)O_(2)、1%邻苯二甲酸氢钾和不同质量浓度的表面活性剂组成,其中表面活性剂为非离子表面活性剂脂肪醇聚氧乙烯醚(AEO-9和AEO-15)、阴离子表面活性剂十二烷基硫酸铵(ADS)和两亲性非离子表面活性剂辛基苯酚聚氧乙烯醚(OP-50)。结果表明,磨料质量分数的增大会使ULK介质的去除速率和k值都增大。聚醚类表面活性剂都能在CMP过程中很好地保护ULK介质表面,降低其去除速率,OP-50的效果尤其好。当采用2%SiO_(2)+0.075%H_(2)O_(2)+1%KHP+200 mg/L OP-50的抛光液进行CMP时,ULK介质的去除速率为5.2 nm/min,k值增幅低于2%,Cu和Co的去除速率基本不变。The effects of mass fraction of abrasive and different surfactants on the dielectric constant(k)and removal rate of porous ULK(ultralow-k)dielectric SiOCH film during chemical mechanical polishing(CMP)were studied.The slurry(pH=10)was mainly composed of 0-4wt.%SiO_(2),0.075wt.%H_(2)O_(2),1wt.%potassium hydrogen phthalate,and different mass concentrations of surfactant,which was a nonionic polyoxyethylene alkyl ether(AEO-9 or AEO-15),an anionic ammonium lauryl sulfate(ADS),or an amphipathic nonionic octylphenol polyoxyethylene ether(OP-50).The results showed that the removal rate and k value of ULK dielectric film were increased with the increasing of the mass fraction of abrasive.All of the used polyether surfactants,especially OP-50,could protect the surface of ULK dielectric film during CMP and reduce its removal rate.When CMP in a slurry composed of 2wt.%SiO_(2),0.075wt.%H_(2)O_(2),1wt.%KHP,and 200 mg/L OP-50,the removal rate of ULK dielectric film was 5.2 nm/min and its k value was increased by 2%below after CMP,while the removal rates of copper and cobalt were changed slightly.

关 键 词：超低介电常数介质 化学机械抛光 去除速率 碱性抛光液 

分 类 号：TN305.2[电子电信—物理电子学]