Si基GaN射频器件研究进展  

Progress of GaN RF HEMTs on silicon substrate

作　　者：房柏彤 朱广润 张凯[1] 郭怀新[1] 陈堂胜[1] FANG Baitong;ZHU Guangrun;ZHANG Kai;GUO Huaixin;CHEN Tangsheng(Nanjing Electronic Devices Institute,Nanjing 210016,China)

机构地区：[1]南京电子器件研究所,江苏南京210016

出　　处：《电子元件与材料》2021年第2期111-118,共8页Electronic Components And Materials

基　　金：国家自然科学基金(61874101,61904162)。

摘　　要：针对低成本、大尺寸的GaN HEMT技术,回顾了近年来Si基GaN射频器件在大尺寸材料外延生长、器件制备工艺与单片集成电路等方面的国内外研究进展,指出推进其发展的重要意义,并分析了抑制射频损耗、无金欧姆接触及复合钝化等技术难点,阐明了具有研究前景的优化及发展方向。基于高阻Si衬底上AlGaN/GaN HEMT结构,通过调控C掺杂技术得到了较低的射频损耗,研制出V型栅结构的Si基GaN射频器件,10 GHz下的线性增益达12.3 dB,Pout为3.6 W/mm,P_(AE)约为45%。分析表明,随着材料与器件等基础问题的解决,未来Si基GaN射频器件在5G应用、低成本雷达等领域拥有巨大的发展前景。Considering the low-cost and large-size GaN HEMT technology,recent research progress of Si-based GaN RF devices at home and abroad is reviewed,including the large-scale epitaxial growth,device fabrication,monolithic integrated circuits,and the significance of promoting its development.Technical difficulties are discussed,such as RF loss suppression,Au-free ohmic contact and compound passivation.Additionally,the optimization and development direction of research prospects are clarified.Based on the AlGaN/GaN HEMT material on the high-resistive Si substrate,low RF loss was obtained by adjusting the C doping technology,and the Si-based GaN RF device with a V-gate structure was developed.Power added efficiency(P_(AE))of 45% can be achieved with an output power density(Pout)of 3.6 W/mm and a linear gain(Gain)of 12.3 dB at 10 GHz under CW power test.Analysis results indicate that,if technical hurdles of materials and devices could be solved,Si-based GaN RF devices will show great prospects in 5 G applications,low-cost radar and many other future technologies.

关 键 词：硅基氮化镓 射频损耗 综述 无金工艺 功率密度 功率附加效率 

分 类 号：TN385[电子电信—物理电子学]