32nm CMOS工艺三点翻转自恢复锁存器设计  

Design of Triple-Node-Upset Self-Recovery Latch in 32nm CMOS Technology

作　　者：黄正峰[1] 潘尚杰 曹剑飞 宋钛 欧阳一鸣[2] 梁华国[1] 倪天明 鲁迎春[1] HUANG Zheng-feng;PAN Shang-jie;CAO Jian-fei;SONG Tai;OUYANG Yi-ming;LIANG Hua-guo;NI Tian-ming;LU Ying-chun(School of Electronic Science & Applied Physics,Hefei University of Technology,Hefei,Anhui 230601,China;School of Computer and Information,Hefei University of Technology,Hefei,Anhui 230601,China;College of Electrical Engineering,Anhui Polytechnic University,Wuhu,Anhui 241000,China)

机构地区：[1]合肥工业大学电子科学与应用物理学院,安徽合肥230601 [2]合肥工业大学计算机与信息学院,安徽合肥230601 [3]安徽工程大学电气工程学院,安徽芜湖241000

出　　处：《电子学报》2021年第2期394-400,共7页Acta Electronica Sinica

基　　金：国家自然科学基金(No.61874156,No.61874157,No.61904001);安徽省自然科学基金(No.1908085QF272)。

摘　　要：CMOS工艺的特征尺寸不断缩减,电荷共享效应诱发的单粒子三点翻转成为研究热点.本文提出了一种单粒子三点翻转自恢复的抗辐射加固锁存器:Hydra-DICE(Dual Interlocked Storage Cell).该锁存器基于24个同构的交叉耦合单元(Cross-Coupled Elements,CCE)排列成阵列结构.当内部任意三个节点同时发生单粒子翻转时,该锁存器都可以自行恢复到正确的逻辑值.与具有等效三点自恢复能力的TNURL(Triple Node Upset Self-Recoverable Latch)锁存器相比,该Hydra-DICE锁存器面积开销降低50%,延迟降低48.28%,功耗降低25%,功耗延迟积降低61.21%.仿真结果表明,该加固锁存器在容错性能、面积开销、延迟和功耗方面取得了很好的折中.The feature size of CMOS technology is continuously shrinking,and the single event triple-node-upset induced by the charge sharing effect has become a research hotspot.This paper proposed a single event triple-node-upset self-recovery radiation-hardened latch:Hydra-DICE.The latch is arranged in an array structure based on 24 homogeneous cross-coupled elements(CCE).When a single event upset occurs at any three internal nodes concurrently,Hydra-DICE can realize the function of self-recovery to the correct logical value.Compared with the TNURL latch which has the equivalent triple-node-upset self-recovery capability,the Hydra-DICE latch has a 50%reduction in area overhead,a 48.28%reduction in delay,a 25.00%reduction in power consumption,and a 61.21%reduction in power consumption delay product.The simulation results show that the hardened latch has made a good compromise in fault tolerance performance,area overhead,delay and power.

关 键 词：锁存器 单粒子翻转 双模互锁存储单元 抗辐射加固 自恢复 

分 类 号：TN43[电子电信—微电子学与固体电子学]