反射高能电子衍射优化GaSb薄膜生长的工艺研究  

Reflected High Energy Electron Diffraction Optimizing GaSb Film Growth Process

作　　者：房丹 张强 李含 谷开慧 Fang Dan;Zhang Qiang;Li Han;Gu Kaihui(Department of Optical and Electronical Science,College of Optical and Electronical Information,Changchun University of Science and Technology,Changchun,Jilin 130022,China)

机构地区：[1]长春理工大学光电信息学院光电科学分院,吉林长春130022

出　　处：《激光与光电子学进展》2020年第23期255-261,共7页Laser & Optoelectronics Progress

基　　金：吉林省科技厅项目(20200301052RQ)。

摘　　要：在利用分子束外延(MBE)技术生长GaSb薄膜材料过程中,利用反射高能电子衍射仪(RHEED)实现了GaSb薄膜制备的实时监控。利用RHEED衍射振荡图样,对衬底表面的脱氧化层和生长过程进行分析和研究,得到了生长参数与衍射图样变化之间的关系,确定了衬底脱氧化层的温度;通过计算生长速率,实现了源温度、束流比和生长温度的优化;利用双晶X射线衍射(XRD)测试技术对GaSb外延薄膜层的表面生长质量进行初步表征和分析,证明了实验生长的薄膜材料基本可满足器件制备的要求,为下一步采用MBE制备量子阱及超晶格结构提供了实验依据。In the process of using molecular beam epitaxy(MBE)technology to grow GaSb thin film materials,we use a reflection high-energy electron diffractometer(RHEED)to realize real-time monitoring of GaSb thin film preparation.We obtain the relationship between the growth parameters and the diffraction pattern change and determine the the temperature of deoxidation layer by analyzing and studying the deoxidation layer on substrate and its growth process based on the RHEED diffraction oscillation pattern.By calculating the growth rate,the optimization of source temperature,beam-to-current ratio,and growth temperature are optimized.Preliminary characterization and analysis of the surface quality of GaSb epitaxial film using double crystal X-ray diffraction(XRD)technology show that GaSb epitaxial film can meet the device preparation requirements and provide experimental basis for the next step of preparing quantum wells and superlattice structures by molecular beam epitaxy.

关 键 词：薄膜 反射高能电子衍射 GASB 分子束外延 生长速率 

分 类 号：TN304[电子电信—物理电子学]